PECVD Silicon Carbon Nitrid Thin Films: Properties

Abstract

Silicon carbon nitride films were grown by the plasma enhanced chemical vapour deposition (PE CVD) technique. The concentration of species in the SiCN films was determined by Rutherford backscattering spectrometry (RBS). Chemical compositions were analyzed by infrared spectroscopy. The hydrogen concentration was determined by the elastic recoil detection (ERD) method. The electrical properties of SiCN films were determined by I-V measurement.