PECVD硅碳氮化薄膜:性能

2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI:10.1109/ASDAM.2008.4743340

P. Boháček, J. Huran, A. Kobzev, N. Balalykin, J. Pezoltd

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引用次数: 0

摘要

采用等离子体增强化学气相沉积(PE CVD)技术制备了氮化硅碳薄膜。采用卢瑟福后向散射光谱法(RBS)测定了SiCN膜中的物质浓度。用红外光谱分析了其化学成分。采用弹性后坐力检测(ERD)法测定氢气浓度。采用I-V法测定了SiCN薄膜的电学性能。

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PECVD Silicon Carbon Nitrid Thin Films: Properties

Silicon carbon nitride films were grown by the plasma enhanced chemical vapour deposition (PE CVD) technique. The concentration of species in the SiCN films was determined by Rutherford backscattering spectrometry (RBS). Chemical compositions were analyzed by infrared spectroscopy. The hydrogen concentration was determined by the elastic recoil detection (ERD) method. The electrical properties of SiCN films were determined by I-V measurement.

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2008 International Conference on Advanced Semiconductor Devices and Microsystems

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