Ga1-xMnxAs稀释磁性半导体的OMVPE生长和表征

2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI:10.1109/ASDAM.2008.4743293

S. Hasenőhrl, M. Kučera, M. Morvic, J. Novák

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引用次数: 0

摘要

采用低压OMVPE制备了一套可变Mn含量的Ga1-xMnxAs外延层。我们研究了作为xMn函数的电输运性质和光学特性。锰原子作为受体并入砷化镓，同时作为电中性中心。掺杂的饱和水平为2.2倍1018 cm-3。光反射率测量表明三元合金的形成，合金中的Mn含量在4.1 × 1020 cm-3时达到饱和。

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OMVPE growth and characterization of Ga1-xMnxAs diluted magnetic semiconductor

A set of Ga_1-xMn_xAs epitaxial layers with variable Mn content x_Mn was prepared using the low-pressure OMVPE. We have studied electrical transport properties and optical characteristics as a function of x_Mn. Mn atoms are incorporated into the GaAs as an acceptor and at the same time as an electrically neutral centre. The saturation level for doping is 2.2times10¹⁸ cm^-3. The ternary alloy formation is indicated by photoreflectance measurements and the Mn content in the alloy saturates at 4.1times10²⁰ cm^-3.

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2008 International Conference on Advanced Semiconductor Devices and Microsystems

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