New progressive method suitable for the exposure optimization of large and complex defect-free chips direct written by ZBA 21 e-beam tool

Abstract

The use of a new progressive method suitable for the exposure optimization is investigated for large and complex defect-free chips direct written by ZBA 21 electron beam pattern generator together with all corresponding microprocesses. Well controlled and resolved details (spaces) between individual quasi-square structures of the final large area neural holography chip were achieved in the range of about 50 nm.