OMVPE growth and characterization of Ga1-xMnxAs diluted magnetic semiconductor

Abstract

A set of Ga_1-xMn_xAs epitaxial layers with variable Mn content x_Mn was prepared using the low-pressure OMVPE. We have studied electrical transport properties and optical characteristics as a function of x_Mn. Mn atoms are incorporated into the GaAs as an acceptor and at the same time as an electrically neutral centre. The saturation level for doping is 2.2times10¹⁸ cm^-3. The ternary alloy formation is indicated by photoreflectance measurements and the Mn content in the alloy saturates at 4.1times10²⁰ cm^-3.