The investigation of semi-insulating GaAs detectors properties after neutron irradiation

2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI:10.1109/ASDAM.2008.4743311

M. Ladzianský, A. Sagaitova, V. Nečas

{"title":"The investigation of semi-insulating GaAs detectors properties after neutron irradiation","authors":"M. Ladzianský, A. Sagaitova, V. Nečas","doi":"10.1109/ASDAM.2008.4743311","DOIUrl":null,"url":null,"abstract":"Bulk semi-insulating (SI) GaAs material due to its relatively high resistance against neutrons [1,2] seems to be an excellent candidate for fabrication of a neutron detector (e.g. neutron digital imaging). Influence of various neutron integral fluencies was studied at a set of detectors based on semi-insulating GaAs. Changes in the detection and electrical properties occurred at various neutron fluencies. Performance of the detectors before and after neutron irradiation was observed via detected spectra of Am radionuclide source. At lower fluencies of neutrons (~1012 n/cm2) the changes in detected spectra and also in current-voltage characteristics are negligible while in the detectors bombarded with higher neutron fluencies (~1013 n/cm2) a fast degradation of detection performance occurred. With increasing fluencies, a rise in the reverse current of the detectors was observed. These observations are the most probably caused by new lattice defects in the base material or overall detector structure (electrode interfaces, surface) created by neutrons.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2008.4743311","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

Abstract

Bulk semi-insulating (SI) GaAs material due to its relatively high resistance against neutrons [1,2] seems to be an excellent candidate for fabrication of a neutron detector (e.g. neutron digital imaging). Influence of various neutron integral fluencies was studied at a set of detectors based on semi-insulating GaAs. Changes in the detection and electrical properties occurred at various neutron fluencies. Performance of the detectors before and after neutron irradiation was observed via detected spectra of Am radionuclide source. At lower fluencies of neutrons (~1012 n/cm2) the changes in detected spectra and also in current-voltage characteristics are negligible while in the detectors bombarded with higher neutron fluencies (~1013 n/cm2) a fast degradation of detection performance occurred. With increasing fluencies, a rise in the reverse current of the detectors was observed. These observations are the most probably caused by new lattice defects in the base material or overall detector structure (electrode interfaces, surface) created by neutrons.

查看原文本刊更多论文

中子辐照后半绝缘GaAs探测器性能的研究

块状半绝缘(SI) GaAs材料由于其相对较高的抗中子阻力[1,2]，似乎是制造中子探测器(例如中子数字成像)的绝佳候选者。在一套基于半绝缘砷化镓的探测器上研究了不同中子积分通量的影响。在不同的中子通量下，探测和电学性质发生了变化。通过对放射性核素源的探测光谱，观察了中子辐照前后探测器的性能。在较低中子通量(~1012 n/cm2)下，探测光谱和电流-电压特性的变化可以忽略不计，而在较高中子通量(~1013 n/cm2)下，探测器的探测性能发生了快速下降。随着通量的增加，观察到检测器的反向电流增加。这些观察结果最有可能是由中子在基材或整个探测器结构(电极界面，表面)中产生的新的晶格缺陷引起的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2008 International Conference on Advanced Semiconductor Devices and Microsystems

自引率

0.00%

发文量