A. Chvála, D. Donoval, P. Beno, J. Marek, T. Kosik
{"title":"Analysis of the geometry on robustness of ESD protection devices","authors":"A. Chvála, D. Donoval, P. Beno, J. Marek, T. Kosik","doi":"10.1109/ASDAM.2008.4743301","DOIUrl":null,"url":null,"abstract":"The analysis of the ESD protection devices supported by the advanced 2-D and 3-D mixed mode electro-thermal device and circuit simulation is presented. The influence of structure geometry on the electrical properties of ESD devices is studied. The optimization of the structure geometry allows down-shrink of the ESD protection device dimensions with further improvement of its main electrical parameters.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2008.4743301","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The analysis of the ESD protection devices supported by the advanced 2-D and 3-D mixed mode electro-thermal device and circuit simulation is presented. The influence of structure geometry on the electrical properties of ESD devices is studied. The optimization of the structure geometry allows down-shrink of the ESD protection device dimensions with further improvement of its main electrical parameters.