稀土元素在辐射探测器和电致发光光源设计中的作用

2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI:10.1109/ASDAM.2008.4743292

J. Grym, O. Procházková, J. Zavadil, K. Žďánský

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引用次数: 0

摘要

由于稀土元素对浅层杂质的化学形态具有较高的亲和性，因此从液相中生长出来的稀土元素对III-V型半导体具有净化作用。我们在生长熔体中添加Pr的液相外延法制备inp基结构时证明了这种净化作用。我们采用低温光致发光，电容电压和温度相关的霍尔效应测量表明，优化浓度的Pr外加剂导致两种电导率类型的高纯度层的生长。讨论了p型InP层在辐射探测器中的应用和InGaAsP层在电致发光光源中的应用。

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Role of rare-earth elements in the design of radiation detectors and electroluminescent sources

Rare-earth (RE) elements present in the growth from the liquid phase have purifying effect on III-V semiconductors due to RE's high affinity towards chemical species of shallow impurities. We demonstrate this purifying effect on the preparation of InP-based structures by liquid phase epitaxy with Pr admixture to the growth melt. We employ low temperature photoluminescence, capacitance-voltage and temperature dependent Hall effect measurements to show that optimized concentration of Pr admixture results in the growth of high purity layers of both conductivity types. We discuss the application of p-type InP layers in radiation detectors and InGaAsP layers in electroluminescent sources.

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2008 International Conference on Advanced Semiconductor Devices and Microsystems

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