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2008 International Conference on Advanced Semiconductor Devices and Microsystems最新文献

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Detection of Breathing 呼吸检测
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743307
J. Kroutil, M. Husák
{"title":"Detection of Breathing","authors":"J. Kroutil, M. Husák","doi":"10.1109/ASDAM.2008.4743307","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743307","url":null,"abstract":"Acoustic signals originate by the flow of air through the trachea during breathing. These signals are possible to pick-up by microphone. This paper describes a method of the breathing detection based on the sensing of acoustic signals in trachea. Parameters of the breathing, detection inspiration and expiration and apnoea pause are possible to determine from these signals. This method is simple and easy to use, portable and provides an accurate measurement and seems to be well suited for use as a modern breathing monitor.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122105069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Purification Action of Rare-Earth Elements in the LPE Growth of III-V Semiconductors: Feedback Phenomena 稀土元素在III-V型半导体LPE生长中的净化作用:反馈现象
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743332
F. Šrobár, O. Procházková
{"title":"Purification Action of Rare-Earth Elements in the LPE Growth of III-V Semiconductors: Feedback Phenomena","authors":"F. Šrobár, O. Procházková","doi":"10.1109/ASDAM.2008.4743332","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743332","url":null,"abstract":"Rare-earth elements present in the growth melt of the LPE process possess the ability to chemically bind atoms responsible for shallow impurity levels in III-V semiconductor compounds. In continuation of our recent theoretical work on this subject, we present a diagrammatical analysis of equations governing this phenomenon. The causal picture of the dependence of free donor concentration versus rare-earth content in the growth melt contains two loops of negative feedback which play a major part in shaping this relation. Mathematical apparatus accompanying the diagrams is used to numerically evaluate various elements of this representation for realistic values of the model parameters, thus allowing insights into mechanism of the purification effect. In particular, the domain of efficiency for the impurity removal is established.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123584387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GHz Class Low-Power Flash ADC for Broadband Communications 用于宽带通信的GHz类低功耗闪存ADC
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743326
J. Sexton, T. Tauqeer, M. Mohiuddin, M. Missous
{"title":"GHz Class Low-Power Flash ADC for Broadband Communications","authors":"J. Sexton, T. Tauqeer, M. Mohiuddin, M. Missous","doi":"10.1109/ASDAM.2008.4743326","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743326","url":null,"abstract":"A low-power (~400 mW) high-speed (2-4 GS/s) 4-bit analogue-to-digital converter (ADC) based on InP/InGaAs heterojunction bipolar transistors (HBT) has been designed and simulated. The technology utilised two novel developments. Firstly stoichiometric conditions permitted growth at a relatively low temperature (420degC) while conserving extremely high-quality materials. Secondly dimeric phosphorus generated from a gallium phosphide (GaP) decomposition source has lead to excellent device properties. The complete ADC shows state-of-the-art performance and includes an interface for connection to standard digital signal processing (DSP) systems whilst dissipating only 400 mW.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134166045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Silicon-based field-effect devices for (bio-)chemical sensing (生物)化学传感用硅基场效应装置
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743345
M. J. Schoning, A. Poghossian
{"title":"Silicon-based field-effect devices for (bio-)chemical sensing","authors":"M. J. Schoning, A. Poghossian","doi":"10.1109/ASDAM.2008.4743345","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743345","url":null,"abstract":"The coupling of semiconductor field-effect devices (FEDs) together with chemical and biological recognition elements, like functional intelligent materials, biomolecules and living cells, represents an attractive platform for creating various bio- and chemical sensors, multi-parameter analysis systems and biochips. This paper is focussing on recent developments and current research activities in the field of (bio-)chemically modified FEDs at the Institute of Nano- and Biotechnologies, scaling down from capacitive EIS (electrolyte-insulator-semiconductor) sensors and LAPS (light-addressable potentiometric sensor) to ISFETs (ion-sensitive field-effect transistor). Selected examples of application of FEDs are presented. With the aim of future development of nano-devices for bio- and chemical sensing, the possibility of a simple preparation of self-aligned nano-structures by using conventional photolithography and pattern-size reduction technique as well as nanoparticle-based field-effect sensors will be discussed, too.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133466648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Preparation and properties of micro-hotplates for gas sensors based on GaAs GaAs气体传感器微热板的制备及性能研究
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743349
D. Tengeri, A. Pullmannova, I. Hotovy, V. Rehacek, S. Hascik, T. Lalinsky
{"title":"Preparation and properties of micro-hotplates for gas sensors based on GaAs","authors":"D. Tengeri, A. Pullmannova, I. Hotovy, V. Rehacek, S. Hascik, T. Lalinsky","doi":"10.1109/ASDAM.2008.4743349","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743349","url":null,"abstract":"In this work, analysis of three different heating systems for two types of Pt micro-hotplate is reported: GaAs bulk structure (bulk GaAs), polyimide/GaAs bulk structure (PI-GaAs) and AlGaAs/GaAs suspended membrane structure (AlGaAs/GaAs). Complex electro-thermal characterization of prepared micro-hotplates was realized. Maximal reachable temperature of suspended membrane heating structure was 260degC with corresponding power 36 mW compared with the GaAs bulk structure with maximal temperature 220degC and corresponding power 1.5 W. At temperatures and powers above maximal limits, degradation and destruction of heating meanders occurred. Power consumption P200degC of sample on GaAs bulk substrate was 850 mW, and on PI/GaAs bulk substrate 380 mW, whereas power consumption of sample prepared on AlGaAs/GaAs suspended membrane was significantly lower about 26 mW.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114604004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Sub-micrometer Hall probes prepared by tip-inducted local anodic oxidation 用尖端诱导局部阳极氧化制备亚微米霍尔探针
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743315
J. Martaus, V. Cambel, D. Gregušová, R. Kúdela
{"title":"Sub-micrometer Hall probes prepared by tip-inducted local anodic oxidation","authors":"J. Martaus, V. Cambel, D. Gregušová, R. Kúdela","doi":"10.1109/ASDAM.2008.4743315","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743315","url":null,"abstract":"We developed a technology of room temperature sub-micrometer Hall probes. Such probes can be used to evaluate absolute values of local magnetic fields and to study sub-micrometer magnetic domain structures. The probes based on an optimized shallow InGaP/AIGaAs/GaAs heterostructure, were firstly processed by standard photolithography and wet-chemical etching, and then downsized to sub-micrometer dimensions by tip-induced local anodic oxidation. The magnetic-field resolution of the probes was evaluated. We demonstrate a 200-nm Hall probe with a magnetic-field resolution of 45 muT/(Hz)1/2 at 140 Hz and 4.2 K, driven by 5 muA bias current.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134276778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The disposable Dot Field Effect Transistor: Process flow and overlay requirements 一次性点场效应晶体管:工艺流程和覆盖层要求
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743317
J. Moers, J. Gerharz, S. Trellenkamp, A.v.d. Hart, G. Mussler, D. Gruitzmacher
{"title":"The disposable Dot Field Effect Transistor: Process flow and overlay requirements","authors":"J. Moers, J. Gerharz, S. Trellenkamp, A.v.d. Hart, G. Mussler, D. Gruitzmacher","doi":"10.1109/ASDAM.2008.4743317","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743317","url":null,"abstract":"The progress in the field of MOSFET devices was facilitated by the downscaling of their dimensions. To maintain device performance, the lateral layout was improved continually, but in recent years new device architectures as Ultra Thin Body and Multi Gate devices were discussed. Furthermore new materials were introduced as high-K gate dielectrics and metal gates. Today the advantages of strained silicon as material for the channel are investigated. The strained material offers the advantage of a higher carrier mobility, which leads to a better Ion/Ioff-ratio. In this work a device process using locally strained silicon by means of template-assisted self-assembly is proposed.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130594936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Destruction in the Active Part of an IGBT Chip Caused by Avalanche-Breakdown at the Edge Termination Structure 边缘终端结构雪崩击穿对IGBT芯片有源部分的破坏
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743305
U. Knipper, F. Pfirsch, T. Raker, J. Niedermeyr, G. Wachutka
{"title":"Destruction in the Active Part of an IGBT Chip Caused by Avalanche-Breakdown at the Edge Termination Structure","authors":"U. Knipper, F. Pfirsch, T. Raker, J. Niedermeyr, G. Wachutka","doi":"10.1109/ASDAM.2008.4743305","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743305","url":null,"abstract":"Simulations and measurements on IGBT chips with a VLD edge termination structure reveal a periodic sequence of sharp current peaks in the avalanche breakdown regime. These current peaks are caused by a current filamentation process initiated and sustained by the interplay between a dynamically modulated electric field and localized self-heating. This mechanism makes it possible that the IGBT chip is capable of withstanding large avalanche-currents for a certain short period of time. In devices with decreased thickness we observe a destruction mechanism occurring in the active part of the IGBT chip, which is caused by the excessive avalanche-current in the edge termination structure. Consequently, for the largest possible safe-operating area, the edge termination structure and the neighboring cells located in the active area of an IGBT chip have to be focussed on for design optimization.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121896116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A new generation of cryogenic silicon diode temperature sensors 新一代低温硅二极管温度传感器
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743327
Yu. M. Shwarts, M. Shwarts, S. Sapon
{"title":"A new generation of cryogenic silicon diode temperature sensors","authors":"Yu. M. Shwarts, M. Shwarts, S. Sapon","doi":"10.1109/ASDAM.2008.4743327","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743327","url":null,"abstract":"In this work, we present the results of development of element base for advanced cryogenic silicon diode temperature sensors (DTSs). In these sensors, influence of the switching effects on sensor characteristics is absent, that allows solving the problem of rise in temperature monitoring efficiency with the required high accuracy in low-temperature region. The developed DTSs will allow ones to meet elevated requirements to technical sensor characteristics from modern precise technologies, space-rocket technique, low-temperature electronics, cryogenic technique, low-temperature physics and engineering. Achieved possibilities to control the sensor's response curve by the excitation current value will allow to extend DTSs application areas both for precise measurements with minimization of dissipatedpower in the sensitive element and for different areas of science and technology with taking into account the requirements to signal-noise ratio.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124141830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
InMnAs dots grown on GaAs surfaces etched via AlAs sacrificial layer 通过AlAs牺牲层蚀刻在GaAs表面生长的InMnAs点
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743321
J. Novák, P. Eliáš, J. Soltýs, S. Hasenőhrl, I. Vávra
{"title":"InMnAs dots grown on GaAs surfaces etched via AlAs sacrificial layer","authors":"J. Novák, P. Eliáš, J. Soltýs, S. Hasenőhrl, I. Vávra","doi":"10.1109/ASDAM.2008.4743321","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743321","url":null,"abstract":"The paper reports on a study of MOVPE growth of InMnAs dots on patterned GaAs substrates. The substrates contained [0 1 1]-oriented mesas (of trapezoidal cross-section) and ridges (of triangular cross-section) confined to facets either close to {311}A and or close to {211}A crystallographic planes. MOVPE proved to be very useful for a controlled preparation of InMnAs dots on such substrates. The analysis showed that almost no dots were grown on (100)-related strips that formed during growth by self-faceting on tops of the triangular ridges. Densities of the InMnAs dots on the {311}A-or {211}A-related facets were about 5-7 times lower compared with those on reference planar (100) substrates. On the average, the dots on the facets were larger than those formed on the reference substrates. The lateral size of the dots varied between 100 and 180 nm.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123083311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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