The disposable Dot Field Effect Transistor: Process flow and overlay requirements

J. Moers, J. Gerharz, S. Trellenkamp, A.v.d. Hart, G. Mussler, D. Gruitzmacher
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Abstract

The progress in the field of MOSFET devices was facilitated by the downscaling of their dimensions. To maintain device performance, the lateral layout was improved continually, but in recent years new device architectures as Ultra Thin Body and Multi Gate devices were discussed. Furthermore new materials were introduced as high-K gate dielectrics and metal gates. Today the advantages of strained silicon as material for the channel are investigated. The strained material offers the advantage of a higher carrier mobility, which leads to a better Ion/Ioff-ratio. In this work a device process using locally strained silicon by means of template-assisted self-assembly is proposed.
一次性点场效应晶体管:工艺流程和覆盖层要求
MOSFET器件尺寸的缩小促进了器件领域的发展。为了保持器件性能,横向布局不断改进,但近年来讨论了超薄体和多栅极器件等新的器件架构。此外,还引入了高钾栅极电介质和金属栅极等新材料。目前研究的是应变硅作为通道材料的优点。应变材料提供了更高的载流子迁移率的优势,从而导致更好的离子/离子比。本文提出了一种利用局部应变硅进行模板辅助自组装的器件工艺。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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