{"title":"Electrical behaviour of Au/InGaAsSb and Au/GaSb junctions","authors":"Z. Horváth, V. Rakovics, B. Podor","doi":"10.1109/ASDAM.2008.4743295","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743295","url":null,"abstract":"Au contacts have been prepared to In<sub>0.12</sub>Ga<sub>0.88</sub>As<sub>0.11</sub>Sb<sub>0.89</sub>/GaSb:Te and to GaSb:Ge/GaSb: Te epitaxial structures. For the In<sub>0.12</sub>Ga<sub>0.88</sub>As<sub>0.11</sub>Sb<sub>0.89</sub>/GaSb:Te structure Au yielded relatively good Schottky contact, but the current-voltage characteristics exhibited two regions at low temperatures due to two competing parallel pathes with different apparent barrier heights, ideality factors, and series resistances. Au on GaSb:Ge/GaSb:Te epitaxial structures resulted in very good ohmic contact.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115816751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Characterization of Semiconductor Devices at Very High Temperatures","authors":"P. Borthen, G. Wachutka","doi":"10.1109/ASDAM.2008.4743361","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743361","url":null,"abstract":"We present a dedicated measurement set-up for the electrical characterization of semiconductor devices and microsystems under very high temperature conditions. The experimental set-up comprises a vacuum system as basic unit and a number of sample stages for different applications. The system enables measurements in the temperature range between room temperature and at least 700degC. We give a detailed description of the measurement system, sample mounting techniques, and exemplary measurements on silicon and SiC devices and test structures.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123569337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Vertical Velocity Measurement - Processing of Sensor Data Using Altitude Corrections","authors":"M. Husák, T. Vitek, A. Bouřa","doi":"10.1109/ASDAM.2008.4743299","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743299","url":null,"abstract":"The system was designed for sensor measurement and data transfer. A new architecture of a multisensor system for temperature measurement using wireless communications was used in the paper. There are used sensors with digital or analog outputs. The control software of the system has been created. Different software were designed for wireless units. The integrated RF chip nRF9E5 was used as wireless units. Chip ensures wireless communication between control unit and sensors as well as wireless switch unit. The control unit controls system operation, i.e. communication, sensor data processing as well as work of actuator unit. Communication is ensured in the range of 300 m in the free space. The system was designed to operate with different type of sensors. The number of sensor can be variable. The system can used PC, PDA or mobile phone to communication with control unit.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121639298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Simulation of Influence of AlGaN/GaN Heterojunction Parameters on Its Capacitance Curves","authors":"J. Osvald","doi":"10.1109/ASDAM.2008.4743348","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743348","url":null,"abstract":"We used the solution of the Poisson equation together with the drift and diffusion equations to simulate precisely the voltage dependence of the AlGaN/GaN capacitor structure. We demonstrate the influence of the structure parameters like doping concentrations of AlGaN, Schottky barrier height, and the thickness of the AlGaN layer on resulting C-V curve of the heterojunction capacitor. Also the capacitance of the structure in forward bias was simulated and the capacitance peak that sometimes occurs in the measurements was identified.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129699808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Quantum-Corrected Simulation of Complementary Nanowire Tunneling Transistors of 5 nm Gate-Length","authors":"A. Heigl, G. Wachutka","doi":"10.1109/ASDAM.2008.4743294","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743294","url":null,"abstract":"Using numerical device simulation we investigated in detail the operational behavior of a cylindrical nanowire tunneling transistor (TFET) and the effect of quantum confinement on its characteristics, with a strong focus on the scalability of such devices. Among others, we discuss the potential device improvements by considering alternative materials for the gate-stack and the source region.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129863662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Ťapajna, E. Dobročka, A. Paskaleva, K. Hušeková, E. Atanassova, K. Frohlich
{"title":"Electrical characterization of Ru-and RuO2/Ta2O5 gate stacks for nanoscale DRAM technology","authors":"M. Ťapajna, E. Dobročka, A. Paskaleva, K. Hušeková, E. Atanassova, K. Frohlich","doi":"10.1109/ASDAM.2008.4743334","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743334","url":null,"abstract":"Electrical properties of metal-oxide-semiconductor structures composed of MOCVD grown Ru or RuO<sub>2</sub> metal gates, rf sputtered Ta<sub>2</sub>O<sub>5</sub> oxide layers, and nitrided Si was investigated. The dielectric constant of Ta<sub>2</sub>O<sub>5</sub> as extracted from capacitance-voltage characteristics was found to be 24 and 28 for Ru and RuO<sub>2</sub> gated structures, respectively. Interfacial SiO<sub>2</sub>-like layer with a thickness of ~2 nm was observed from X-ray reflectivity analysis. The effective work functions of Ru and RuO<sub>2</sub> in contact with Ta<sub>2</sub>O<sub>5</sub> were found to be 4.65 and 4.8 eV, respectively. Temperature dependent current-voltage measurements indicate the transition from the Pool-Frenkel emission (or thermionic field emission) to the field emission conduction mechanism in combination with the direct tunneling across the SiO<sub>2</sub>-like interfacial layer under gate as well as substrate injection.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120906653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
F. Dubecký, L. Ryć, J. Kaczmarczyk, M. Scholz, B. Zat’ko, P. Boháček, J. Huran, M. Ladzianský
{"title":"Registration of fast neutrons emissions from hot plasmas by bulk semi-insulating GaAs detectors","authors":"F. Dubecký, L. Ryć, J. Kaczmarczyk, M. Scholz, B. Zat’ko, P. Boháček, J. Huran, M. Ladzianský","doi":"10.1109/ASDAM.2008.4743342","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743342","url":null,"abstract":"Technology of neutron detectors based on semi-insulating (SI) GaAs covered by high density polyethylene (HDPE) is described. The detectors are tested for reactor neutron damage and detection of alpha. Fabricated detectors are applied for registration of neutrons emitted by hot plasmas. To increase sensitivity and achieve insensitivity to background signals from soft X-and -rays four detectors connected in bridge circuit are used. First results are presented and discussed.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"39 3-4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131966307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Srnánek, J. Kovác, J. Jakabovic, G. Irmer, E. Dobročka, D. Haško
{"title":"Characterisation of organic field effect transistor structures by micro-Raman spectroscopy, AFM and XRD methods","authors":"R. Srnánek, J. Kovác, J. Jakabovic, G. Irmer, E. Dobročka, D. Haško","doi":"10.1109/ASDAM.2008.4743331","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743331","url":null,"abstract":"Three independent methods show clear evidence that pentacene layers grown on parylene C layer had better molecular microstructure compared to films grown on SiO2 surface. The electrical measurements confirmed these results and carrier mobility of 0.15 cm2 /Vs was obtained in OFET devices.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133384262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. Vavrinsky, V. Stopjaková, I. Brezina, Vladimir Tvarozek, L. Majer, P. Soláriková
{"title":"Electro-Optical Monitoring of Human Cognitive Processes","authors":"E. Vavrinsky, V. Stopjaková, I. Brezina, Vladimir Tvarozek, L. Majer, P. Soláriková","doi":"10.1109/ASDAM.2008.4743337","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743337","url":null,"abstract":"This paper presents a new approach of the non-invasive biomedical monitoring of selected psychosomatic processes. The proposed method measures human skin conductivities (psycho-galvanic reflex - PGR) using the interdigitated array (IDA) of microelectrodes as well as skin temperature and skin reflectance using optical spectrometer, which will allow continual monitoring and analysis of complicated physiological and therapeutic processes. The psychological test was focused on short-time stress situation with a large scale of tasks.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128159272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Physical Modelling of a Step-Graded AlGaAs/GaAs Gunn Diode and Investigation of Hot Electron Injector Performance","authors":"F. Amir, N. Farrington, T. Tauqeer, M. Missous","doi":"10.1109/ASDAM.2008.4743356","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743356","url":null,"abstract":"This paper presents continuing work on the development of a novel physical model for an advanced GaAs Gunn diode with hot-electron injection. The device itself is commercially manufactured by e2v Technologies (UK) Ltd. for use in 77 GHz automotive Adaptive Cruise Control (ACC) systems. A 2D model has been developed using SILVA CO. Simulated IV characteristics are presented and shown to match well with measured data over a range of temperatures. The relationship between doping spike carrier concentration in the injector and asymmetry in the device's IV characteristic is then examined and compared to measured data.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126684008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}