步进梯度AlGaAs/GaAs Gunn二极管物理建模及热电子注入器性能研究

2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI:10.1109/ASDAM.2008.4743356

F. Amir, N. Farrington, T. Tauqeer, M. Missous

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引用次数: 11

摘要

本文介绍了一种新型热电子注入GaAs Gunn二极管物理模型的持续发展工作。该设备本身由e2v Technologies (UK) Ltd.商业化生产，用于77 GHz汽车自适应巡航控制(ACC)系统。利用SILVA CO.开发了一个二维模型。模拟的IV特性与温度范围内的测量数据很好地匹配。然后检查了注入器中掺杂尖峰载流子浓度与器件IV特性不对称性之间的关系，并将其与测量数据进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Physical Modelling of a Step-Graded AlGaAs/GaAs Gunn Diode and Investigation of Hot Electron Injector Performance

This paper presents continuing work on the development of a novel physical model for an advanced GaAs Gunn diode with hot-electron injection. The device itself is commercially manufactured by e2v Technologies (UK) Ltd. for use in 77 GHz automotive Adaptive Cruise Control (ACC) systems. A 2D model has been developed using SILVA CO. Simulated IV characteristics are presented and shown to match well with measured data over a range of temperatures. The relationship between doping spike carrier concentration in the injector and asymmetry in the device's IV characteristic is then examined and compared to measured data.

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2008 International Conference on Advanced Semiconductor Devices and Microsystems

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