Au/InGaAsSb和Au/GaSb结的电学行为

2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI:10.1109/ASDAM.2008.4743295

Z. Horváth, V. Rakovics, B. Podor

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引用次数: 1

摘要

制备了In0.12Ga0.88As0.11Sb0.89/GaSb:Te和GaSb:Ge/GaSb: Te外延结构的Au触点。对于In0.12Ga0.88As0.11Sb0.89/GaSb: Au结构产生了相对较好的肖特基接触，但由于具有不同的表观势垒高度、理想因数和串联电阻的两条竞争并联路径，在低温下呈现出两个区域的电流-电压特性。Au在GaSb上:Ge/GaSb:外延结构产生了非常好的欧姆接触。

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Electrical behaviour of Au/InGaAsSb and Au/GaSb junctions

Au contacts have been prepared to In_0.12Ga_0.88As_0.11Sb_0.89/GaSb:Te and to GaSb:Ge/GaSb: Te epitaxial structures. For the In_0.12Ga_0.88As_0.11Sb_0.89/GaSb:Te structure Au yielded relatively good Schottky contact, but the current-voltage characteristics exhibited two regions at low temperatures due to two competing parallel pathes with different apparent barrier heights, ideality factors, and series resistances. Au on GaSb:Ge/GaSb:Te epitaxial structures resulted in very good ohmic contact.

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2008 International Conference on Advanced Semiconductor Devices and Microsystems

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