Characterization of Semiconductor Devices at Very High Temperatures

Abstract

We present a dedicated measurement set-up for the electrical characterization of semiconductor devices and microsystems under very high temperature conditions. The experimental set-up comprises a vacuum system as basic unit and a number of sample stages for different applications. The system enables measurements in the temperature range between room temperature and at least 700degC. We give a detailed description of the measurement system, sample mounting techniques, and exemplary measurements on silicon and SiC devices and test structures.