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纳米级DRAM技术中ru和RuO2/Ta2O5栅极堆的电学特性

2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI:10.1109/ASDAM.2008.4743334

M. Ťapajna, E. Dobročka, A. Paskaleva, K. Hušeková, E. Atanassova, K. Frohlich

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引用次数: 1

摘要

研究了由MOCVD生长的Ru或RuO2金属栅极、rf溅射Ta2O5氧化层和氮化Si组成的金属氧化物半导体结构的电学性能。从电容电压特性中提取的Ta2O5在Ru和RuO2门控结构中的介电常数分别为24和28。x射线反射率分析观察到界面sio2样层，厚度约2 nm。Ru和RuO2与Ta2O5接触时的有效功函数分别为4.65和4.8 eV。温度相关的电流-电压测量表明，从池-弗兰克尔发射(或热离子场发射)到场发射传导机制的转变与栅极下的类sio2界面层的直接隧穿以及衬底注入相结合。

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Electrical characterization of Ru-and RuO2/Ta2O5 gate stacks for nanoscale DRAM technology

Electrical properties of metal-oxide-semiconductor structures composed of MOCVD grown Ru or RuO₂ metal gates, rf sputtered Ta₂O₅ oxide layers, and nitrided Si was investigated. The dielectric constant of Ta₂O₅ as extracted from capacitance-voltage characteristics was found to be 24 and 28 for Ru and RuO₂ gated structures, respectively. Interfacial SiO₂-like layer with a thickness of ~2 nm was observed from X-ray reflectivity analysis. The effective work functions of Ru and RuO₂ in contact with Ta₂O₅ were found to be 4.65 and 4.8 eV, respectively. Temperature dependent current-voltage measurements indicate the transition from the Pool-Frenkel emission (or thermionic field emission) to the field emission conduction mechanism in combination with the direct tunneling across the SiO₂-like interfacial layer under gate as well as substrate injection.

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来源期刊

2008 International Conference on Advanced Semiconductor Devices and Microsystems

2008 International Conference on Advanced Semiconductor Devices and Microsystems

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