5 nm栅极长度互补纳米线隧道晶体管的量子校正模拟

2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI:10.1109/ASDAM.2008.4743294

A. Heigl, G. Wachutka

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引用次数: 1

摘要

利用数值器件模拟，我们详细研究了圆柱形纳米线隧道晶体管(ttfet)的工作行为和量子约束对其特性的影响，并着重研究了这种器件的可扩展性。除此之外，我们还通过考虑栅极堆和源区域的替代材料来讨论潜在的器件改进。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Quantum-Corrected Simulation of Complementary Nanowire Tunneling Transistors of 5 nm Gate-Length

Using numerical device simulation we investigated in detail the operational behavior of a cylindrical nanowire tunneling transistor (TFET) and the effect of quantum confinement on its characteristics, with a strong focus on the scalability of such devices. Among others, we discuss the potential device improvements by considering alternative materials for the gate-stack and the source region.

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2008 International Conference on Advanced Semiconductor Devices and Microsystems

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