用于宽带通信的GHz类低功耗闪存ADC

2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI:10.1109/ASDAM.2008.4743326

J. Sexton, T. Tauqeer, M. Mohiuddin, M. Missous

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引用次数: 9

摘要

设计并仿真了一种基于InP/InGaAs异质结双极晶体管(HBT)的低功率(~400 mW)高速(2-4 GS/s) 4位模数转换器(ADC)。这项技术利用了两个新的发展。首先，化学计量条件允许在相对较低的温度(420摄氏度)下生长，同时保存非常高质量的材料。其次，由磷化镓(GaP)分解源生成的二聚体磷具有优异的器件性能。完整的ADC具有最先进的性能，包括连接标准数字信号处理(DSP)系统的接口，同时功耗仅为400 mW。

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GHz Class Low-Power Flash ADC for Broadband Communications

A low-power (~400 mW) high-speed (2-4 GS/s) 4-bit analogue-to-digital converter (ADC) based on InP/InGaAs heterojunction bipolar transistors (HBT) has been designed and simulated. The technology utilised two novel developments. Firstly stoichiometric conditions permitted growth at a relatively low temperature (420degC) while conserving extremely high-quality materials. Secondly dimeric phosphorus generated from a gallium phosphide (GaP) decomposition source has lead to excellent device properties. The complete ADC shows state-of-the-art performance and includes an interface for connection to standard digital signal processing (DSP) systems whilst dissipating only 400 mW.

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2008 International Conference on Advanced Semiconductor Devices and Microsystems

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