稀土元素在III-V型半导体LPE生长中的净化作用:反馈现象

F. Šrobár, O. Procházková
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引用次数: 0

摘要

稀土元素存在于LPE工艺的生长熔体中,具有化学结合III-V型半导体化合物中导致浅杂质水平的原子的能力。为了继续我们最近在这个问题上的理论工作,我们对控制这一现象的方程作了图解分析。生长熔体中自由供体浓度与稀土含量的因果关系图包含两个负反馈回路,它们在形成这种关系中起主要作用。随附图表的数学仪器用于对模型参数的实际值的表示的各种元素进行数值评估,从而允许深入了解净化效果的机制。特别地,建立了杂质去除的效率域。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Purification Action of Rare-Earth Elements in the LPE Growth of III-V Semiconductors: Feedback Phenomena
Rare-earth elements present in the growth melt of the LPE process possess the ability to chemically bind atoms responsible for shallow impurity levels in III-V semiconductor compounds. In continuation of our recent theoretical work on this subject, we present a diagrammatical analysis of equations governing this phenomenon. The causal picture of the dependence of free donor concentration versus rare-earth content in the growth melt contains two loops of negative feedback which play a major part in shaping this relation. Mathematical apparatus accompanying the diagrams is used to numerically evaluate various elements of this representation for realistic values of the model parameters, thus allowing insights into mechanism of the purification effect. In particular, the domain of efficiency for the impurity removal is established.
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