通过AlAs牺牲层蚀刻在GaAs表面生长的InMnAs点

2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI:10.1109/ASDAM.2008.4743321

J. Novák, P. Eliáš, J. Soltýs, S. Hasenőhrl, I. Vávra

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引用次数: 0

摘要

本文报道了在图案化砷化镓衬底上InMnAs点的MOVPE生长的研究。衬底包含[0 11]定向台面(梯形截面)和脊(三角形截面)，这些脊被限制在接近{311}A和或接近{211}A晶体平面的面。事实证明，MOVPE对于在这种底物上控制制备InMnAs点是非常有用的。分析表明，在生长过程中，在三角形脊的顶部自切面形成的100条相关条带上几乎没有斑点生长。与参考平面(100)衬底相比，{311}a或{211}a相关表面上的InMnAs点密度低约5-7倍。平均而言，表面上的圆点比在参考衬底上形成的圆点大。点的横向尺寸在100 ~ 180 nm之间。

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InMnAs dots grown on GaAs surfaces etched via AlAs sacrificial layer

The paper reports on a study of MOVPE growth of InMnAs dots on patterned GaAs substrates. The substrates contained [0 1 1]-oriented mesas (of trapezoidal cross-section) and ridges (of triangular cross-section) confined to facets either close to {311}A and or close to {211}A crystallographic planes. MOVPE proved to be very useful for a controlled preparation of InMnAs dots on such substrates. The analysis showed that almost no dots were grown on (100)-related strips that formed during growth by self-faceting on tops of the triangular ridges. Densities of the InMnAs dots on the {311}A-or {211}A-related facets were about 5-7 times lower compared with those on reference planar (100) substrates. On the average, the dots on the facets were larger than those formed on the reference substrates. The lateral size of the dots varied between 100 and 180 nm.

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2008 International Conference on Advanced Semiconductor Devices and Microsystems

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