Al0.3Ga0.7N/GaN半导体器件欧姆触点的电学特性

2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI:10.1109/ASDAM.2008.4743291

M. Florovič, J. Kováč, P. Kordos, J. Škriniarová, T. Lalinsky, S. Hascik, M. Michalka, D. Donoval, F. Uherek

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引用次数: 1

摘要

研究了Al0.3Ga0.7N/GaN半导体器件欧姆触点的电学性能。采用了电子束蒸发(EBE)和脉冲激光沉积(PLD)两种不同的制备技术。EBE触点比PLD制备的触点电阻低10倍以上。与PLD欧姆触点相比，如果使用EBE欧姆触点，制备的hfet的特性产生了更高的饱和漏极电流和峰值跨导。用于Al0.3Ga0.7N/GaN器件制备的PLD程序的优化正在进行中。

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Electrical properties of ohmic contacts for Al0.3Ga0.7N/GaN semiconductor devices

Electrical properties of the ohmic contacts for Al0.3Ga0.7N/GaN semiconductor devices were investigated. Two different preparation techniques were used, electron beam evaporation (EBE) and pulsed laser deposition (PLD). The EBE contacts show more than 10-times lower specific contact resistance than those prepared by PLD. Characterization of the HFETs prepared yielded higher saturation drain current and peak transconductance if EBE ohmic contacts were used comparing to PLD ohmic contacts. An optimisation of the PLD procedure to be used at the Al0.3Ga0.7N/GaN device preparation is in progress.

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2008 International Conference on Advanced Semiconductor Devices and Microsystems

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