72nd Device Research Conference最新文献_第3页

Gate tunable MoS2-based thermoelectric devices 栅极可调谐mos2基热电器件

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872317

M. Kayyalha, Yong P. Chen

引用次数: 0

Battery-less impact-logging device consisting of a vibration energy scavenger and ferroelectric memory 由振动能量清除器和铁电存储器组成的无电池冲击记录装置

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872299

Y. Kaneko, Y. Nishitani, M. Ueda, A. Omote

引用次数: 0

Gated piezoresistive GaN microcantilever as an acoustic transducer 门控压阻GaN微悬臂作为声换能器

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872292

A. Talukdar, G. Koley

引用次数: 0

Detection of the first charged states in ultrasmall Si single-hole transistor using dual-channel radio frequency reflectometry 用双通道射频反射法检测超小型硅单孔晶体管的第一带电态

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872308

A. Orlov, P. Fay, G. Snider, X. Jehl, S. Barraud, M. Sanquer

引用次数: 1

All-CVD graphene field-effect transistors with h-BN gate dielectric and local back gate 具有h-BN栅极介质和局部后门的全cvd石墨烯场效应晶体管

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872297

M. Ebrish, S. Koester

引用次数: 0

High performance flexible CMOS SOI FinFETs 高性能柔性CMOS SOI finfet

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872382

H. Fahad, G. T. Sevilla, M. Ghoneim, M. Hussain

引用次数: 1

Enhancement-mode Al2O3/InAlN/GaN MOS-HEMT on Si with high drain current density 0.84 A/mm and threshold voltage of +1.9 V 硅基上Al2O3/InAlN/GaN增强型MOS-HEMT的漏极电流密度为0.84 A/mm，阈值电压为+1.9 V

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872294

J. Freedsman, A. Watanabe, T. Egawa

引用次数: 3

Current gain of amorphous silicon thin-film transistors above the cutoff frequency 非晶硅薄膜晶体管在截止频率以上的电流增益

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872403

W. Rieutort-Louis, Liechao Huang, Yingzhe Hu, J. Sanz-Robinson, T. Moy, Y. Afsar, J. Sturm, N. Verma, S. Wagner

引用次数: 5

Making the Mid-IR nano with epitaxial plasmonic devices 用外延等离子体器件制备中红外纳米器件

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872391

S. Law, C. Roberts, S. Inampudi, W. Streyer, A. Rosenberg, V. Podolskiy, D. Wasserman

{"title":"Making the Mid-IR nano with epitaxial plasmonic devices","authors":"S. Law, C. Roberts, S. Inampudi, W. Streyer, A. Rosenberg, V. Podolskiy, D. Wasserman","doi":"10.1109/DRC.2014.6872391","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872391","url":null,"abstract":"We have extensively investigated heavily doped semiconductors as potential plasmonic metals at long wavelengths. The ability to control the doping level in a semiconductor material, both III-V's (InAs/InSb) and Silicon, allows for control of the metal's optical properties, and adds an intriguing additional controllable parameter to the design of plasmonic structures. These materials can be quite accurately modeled using the Drude formalism, even for energies larger than the band gap, and have a number of attractive qualities, including control of carrier concentration (and thus plasma frequency, ωρ), as well as single-crystal material quality, atomic-layer control of thicknesses, and the potential for integration with epitaxially-grown mid-IR optoelectronic devices. In this presentation, I will discuss recent developments in epitaxial plasmonic devices for mid-IR applications. First, the growth and characterization of our materials will be discussed, as well as the material limitations. Subsequently, I will demonstrate the doped semiconductors potential as epsilon-near-zero (ENZ) materials. At ENZ frequencies, we have demonstrated enhanced coupling to sub-wavelength waveguides, offering a potential route towards overcoming the mismatch between the micron-scale light of the mid-IR and the nano-scale. In addition, we have shown that near ENZ, these materials thin (d ≪ λo) loss-less dielectric films to serve as perfect absorbing layers, by controlling the metal/dielectric interface phase shift in thin film interference structures.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121045121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low-power organic electronics based on gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures 垂直石墨烯-有机半导体异质结构中基于栅极可调注入势垒的低功耗有机电子学

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872405

H. Hlaing, F. Carta, Robert A. Barton, C. Nam, Nicholas Petrone, J. Hone, I. Kymissis

{"title":"Low-power organic electronics based on gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures","authors":"H. Hlaing, F. Carta, Robert A. Barton, C. Nam, Nicholas Petrone, J. Hone, I. Kymissis","doi":"10.1109/DRC.2014.6872405","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872405","url":null,"abstract":"Novel device architectures based on heterostructures of graphene with semiconductor layers have recently attracted considerable interest due to their potential in a wide range of electronic and photonic applications. The key concept in these devices is to exploit the work function tunability of graphene via external gate field to modulate the current flow across the graphene-semiconductor junction by adjusting the Schottky barrier height. Transistor devices based on a vertical heterojunction of graphene with inorganic semiconductors (n- and p-type Silicon) [1], oxide semiconductor (n-type indium gallium zinc oxide) [2,3] and flakes of 2D layered materials (molybdenum disulfide, tungsten disulfide) [4-7] have been successfully fabricated with a high on/off ratio, overcoming the limitation of planar graphene field-effect devices. We demonstrate, for the first time, low-voltage complementary p- and n-channel vertical organic thin film transistors (VOTFTs) based on the graphene-organic semiconductor heterojunctions with simple, scalable and low-temperature fabrication process. VOTFT device with thin layer of prototypical n-type organic semiconductor C60 exhibits high on-current densities in the range of 10 mA/cm2 with the driving voltage of only 1 V suppressing the output current of traditional planar organic field-effect transistors. It can also operate at the bias as low as 200 mV with high on/off ratio (~103). For low-power logic application, complementary VOTFT devices with prototypical p-type organic semiconductors (CuPc, Pentacene, α-6T, Rubrene) are also investigated.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116289529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2