{"title":"具有h-BN栅极介质和局部后门的全cvd石墨烯场效应晶体管","authors":"M. Ebrish, S. Koester","doi":"10.1109/DRC.2014.6872297","DOIUrl":null,"url":null,"abstract":"We have demonstrated operation of locally backgated graphene gFETs with CVD-grown h-BN and graphene, and the results provide important insights into the impact of h-BN on the transport and interfacial properties of these devices.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"05 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"All-CVD graphene field-effect transistors with h-BN gate dielectric and local back gate\",\"authors\":\"M. Ebrish, S. Koester\",\"doi\":\"10.1109/DRC.2014.6872297\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have demonstrated operation of locally backgated graphene gFETs with CVD-grown h-BN and graphene, and the results provide important insights into the impact of h-BN on the transport and interfacial properties of these devices.\",\"PeriodicalId\":293780,\"journal\":{\"name\":\"72nd Device Research Conference\",\"volume\":\"05 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"72nd Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2014.6872297\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"72nd Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2014.6872297","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
All-CVD graphene field-effect transistors with h-BN gate dielectric and local back gate
We have demonstrated operation of locally backgated graphene gFETs with CVD-grown h-BN and graphene, and the results provide important insights into the impact of h-BN on the transport and interfacial properties of these devices.
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