发布求助
文献互助 智能选刊 最新文献

72nd Device Research Conference最新文献

筛选
英文 中文
III-V Nitride based triangular microcantilever heater for selective detection of organic vapors at low temperatures III-V型氮基三角形微悬臂加热器，用于低温下有机蒸汽的选择性检测
72nd Device Research Conference Pub Date : 2014-08-07 DOI: 10.1109/DRC.2014.6872322
I. Jahangir, Ehtesham Bin Quddus, G. Koley
{"title":"III-V Nitride based triangular microcantilever heater for selective detection of organic vapors at low temperatures","authors":"I. Jahangir, Ehtesham Bin Quddus, G. Koley","doi":"10.1109/DRC.2014.6872322","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872322","url":null,"abstract":"Detection of volatile organic compounds (VOCs), which are widely used in industrial processes and household products, is very important due to significant health hazards associated with them.1 The common techniques used for detecting VOCs often suffer from one or more of the following issues - high power consumption, limited selectivity, complicated functionalization technique and expensive characterization tools.2-7 In this work, we present an unfunctionalized AlGaN/GaN heterostructure based triangular microcantilever heater (TMH) sensor, which has been utilized to perform selective detection of a wide range of diluted VOCs below their auto-ignition temperature based on responses that are strongly correlated with their latent heat and dipole moment.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122047194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Multi-frequency lithium niobate thin-film resonators 多频铌酸锂薄膜谐振器
72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872277
S. Bhave
{"title":"Multi-frequency lithium niobate thin-film resonators","authors":"S. Bhave","doi":"10.1109/DRC.2014.6872277","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872277","url":null,"abstract":"Summary form only given. To satisfy the ever-increasing demand for spectrum, commercial markets desire integrated multi-frequency “band”-select duplexer and diplexer filters, with fractional bandwidth (BW) ranging from 3% to 10% and steep roll-off for high stop band rejection. The achievable bandwidth of such filters is ultimately limited by the electro-mechanical coupling factor (kt2) of the resonators, while the roll-off is determined by resonator quality factor (Q). Therefore, resonators with both high kt2 and high Q are desired for large BW steep roll-off filters. In this talk I present the fabrication technology and design of thin-film lithium niobate (LN) contour-mode resonators. By carefully positioning the inter-digital transducer (IDT), we 2 achieved CMRs with kt2×Q of 148 (IDT @ node) and very high kt2 resonators with spur-attenuated response (IDT @ anti-node) [1,2] . We have demonstrated resonators with frequencies ranging from 400MHz to 1.9GHz on a single chip. Additionally, we have demonstrated high optical Q, GHz FSR photonic resonators on the same platform paving the way for high-bandwidth and efficient chip-scale microwave photonics [3].","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"3273 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127491674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InP/InGaAs core/shell nanowire tunnel diodes for radial tunnel field effect transistor and multi-junction solar cell applications 用于径向隧道场效应晶体管和多结太阳能电池的InP/InGaAs核/壳纳米线隧道二极管
72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872328
B. Ganjipour, Ofogh Tizno, M. Heurlin, M. Borgstrom, C. Thelander, L. Samuelson
{"title":"InP/InGaAs core/shell nanowire tunnel diodes for radial tunnel field effect transistor and multi-junction solar cell applications","authors":"B. Ganjipour, Ofogh Tizno, M. Heurlin, M. Borgstrom, C. Thelander, L. Samuelson","doi":"10.1109/DRC.2014.6872328","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872328","url":null,"abstract":"Ever since the invention of the tunnel diodes by Leo Esaki in 1957, they have been the subject of numerous studies as building blocks for ultra-low power electronics and also as sub-cell connections in multi-junction solar cells. Tunneling field-effect transistors (TFETs) have attracted a lot of attention for ultra low-power electronic applications because of superior OFF-state performance. However, to date, TFETs suffer from poor-ON state currents which can be addressed by increasing the tunneling area and electric field. In this respect, radial nanowire heterostructures are attractive candidates for boosting the ON-state of T-FETs because the tunneling area is proportional to LchannelRNW. A core/shell geometry also enables the gate electric field to align with the internal junction field which may result in an improved SS.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123710373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Biomimetic 4F2 synapse with intrinsic timescale for pulse based STDP by I-NPN selection device 基于I-NPN选择装置的脉冲STDP仿生4F2突触的内在时间标度
72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872301
R. Meshram, B. Rajendran, U. Ganguly
{"title":"Biomimetic 4F2 synapse with intrinsic timescale for pulse based STDP by I-NPN selection device","authors":"R. Meshram, B. Rajendran, U. Ganguly","doi":"10.1109/DRC.2014.6872301","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872301","url":null,"abstract":"We have proposed a 4F2 synapse using I-NPN based selector with high on-off ratio as well as intrinsic timescales which are utilized to implement time correlation in a synapse for high density neuromorphic circuits. STDP based learning is demonstrated using simple pulses while is true biomimetic.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126756491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
InGaAs tri-gate MOSFETs with MOVPE regrown source/drain 具有MOVPE再生源极/漏极的InGaAs三栅mosfet
72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872327
Y. Mishima, T. Kanazawa, H. Kinoshita, Eiji Uehara, Y. Miyamoto
{"title":"InGaAs tri-gate MOSFETs with MOVPE regrown source/drain","authors":"Y. Mishima, T. Kanazawa, H. Kinoshita, Eiji Uehara, Y. Miyamoto","doi":"10.1109/DRC.2014.6872327","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872327","url":null,"abstract":"InGaAs MOSFETs are attractive candidate for future high-speed and low-power-consumption devices. To enhance the performance of that, we propose a novel device structure which contains the superior current controllability due to the tri-gate structure and the high current drivability due to the n+-InGaAs source surrounding the non-planar channel. In this report, we demonstrate the source regrowth process for non-planar channel structure and current characteristics of the device fabricated by using regrowth.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126969646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Demonstration of 2D/3D p-MoS2/n-SiC junction 2D/3D p-MoS2/n-SiC结的演示
72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872306
Edwin W. Lee, Lu Ma, D. Nath, C. Lee, Yiying Wu, S. Rajan
{"title":"Demonstration of 2D/3D p-MoS2/n-SiC junction","authors":"Edwin W. Lee, Lu Ma, D. Nath, C. Lee, Yiying Wu, S. Rajan","doi":"10.1109/DRC.2014.6872306","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872306","url":null,"abstract":"In this work, we demonstrate 2D/3D heterojunction using large-area crystalline p-MoS2 epitaxially grown on n-doped 4H-SiC. The diode exhibited excellent rectification with an ideality factor of 1.5, as well as C-V characteristics typical of an anisotype p-n junction. Besides being promising for enabling novel device topologies, this realization of a p-type 2D/n-type 3D heterostructure holds potential for circumventing challenges associated with p-doping in wide bandgap (WBG) semiconductors which has otherwise held back the successful development of bipolar devices in WBG systems.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122311761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of aging and restoration of polyethylene-oxide cesium-perchlorate solid polymer electrolyte used for ion doping of a WSe2 field-effect transistor 用于WSe2场效应晶体管离子掺杂的聚乙烯-氧化物铯-高氯酸盐固体聚合物电解质老化与修复研究
72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872329
S. Fathipour, Huilong Xu, Erich W Kinder, S. Fullerton‐Shirey, A. Seabaugh
{"title":"Investigation of aging and restoration of polyethylene-oxide cesium-perchlorate solid polymer electrolyte used for ion doping of a WSe2 field-effect transistor","authors":"S. Fathipour, Huilong Xu, Erich W Kinder, S. Fullerton‐Shirey, A. Seabaugh","doi":"10.1109/DRC.2014.6872329","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872329","url":null,"abstract":"Transition metal dichalcogenides (TMDs) are of interest for tunnel field-effect transistors (TFETs) [1]. Their ultrathin body, absence of dangling bonds and native oxides, robustness to short channel effects, dielectric mediated mobilities, and the presence of a band gap are all favorable for use in TFETs. However, doping methods are needed for TMDs to create the p-n junction required for the TFET. Charge transfer doping [2] and ion-doping using solid polymers [3] are two approaches being explored. In this paper we show for the first time, the use of polyethylene oxide (PEO) and the salt, CsClO4, to induce both n and p channel conductivity in exfoliated WSe2 FETs.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122168948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Ionic gated WSe2 FETs: Towards transparent Schottky barriers 离子门控WSe2场效应管:迈向透明肖特基势垒
72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872331
A. Prakash, Saptarshi Das, R. Mehta, Zhihong Chen, J. Appenzeller
{"title":"Ionic gated WSe2 FETs: Towards transparent Schottky barriers","authors":"A. Prakash, Saptarshi Das, R. Mehta, Zhihong Chen, J. Appenzeller","doi":"10.1109/DRC.2014.6872331","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872331","url":null,"abstract":"In this article, we experimentally demonstrate for the first time high performance ionic liquid gated Schottky barrier WSe2 FETs with large current drive capabilities for both the electron and the hole branch. We also show that through proper scaling of the flake thickness, the Schottky barrier can be made transparent to the carrier injection and thus transforming the metal contacts into pseudo-Ohmic ones. We also analyzed the tunneling current through the Schottky barrier and compared it with numerical simulations in order to evaluate the potential of WSe2 for low power applications. WSe2 belongs to the family of two-dimensional layered semiconducting transition metal dichalcogenides (TMDs) which have received substantial attention in the device community as alternative channel materials to Si. [1] WSe2 is especially interesting since it shows ambipolar conduction due to the pinning of metal Fermi level close to the middle of the bandgap. [2] In addition, the relatively small carrier effective mass [3] of WSe2 in comparison to other TMDs makes this material appealing for low power tunneling devices.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128438952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
In0.63Ga0.37As FinFETs using selectively regrown nanowires with peak transconductance of 2.85 mS/μm at Vds = 0.5 V 采用选择性再生纳米线的In0.63Ga0.37As finfet在Vds = 0.5 V时的峰值跨导率为2.85 mS/μm
72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872371
C. Zota, L. Wernersson, E. Lind
{"title":"In0.63Ga0.37As FinFETs using selectively regrown nanowires with peak transconductance of 2.85 mS/μm at Vds = 0.5 V","authors":"C. Zota, L. Wernersson, E. Lind","doi":"10.1109/DRC.2014.6872371","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872371","url":null,"abstract":"III-V materials such as In-rich In<sub>1-x</sub>Ga<sub>x</sub>As have attracted much attention for low-power applications due to their excellent electron transport properties. To suppress high off-currents in deeply scaled devices, multi-gate MOSFETs (MuGFETs) such as FinFETs, which have improved electrostatic integrity, may be employed [1]. We have previously demonstrated In<sub>0.53</sub>Ga<sub>0.47</sub>As FinFETs utilizing selectively regrown nanowires as channel [2]. In this work we report on the next generation of these devices, with increased In-content in the channel, scaled down nanowire dimensions and improved contacts. A record-value of peak transconductance g<sub>m, peak</sub> = 2.85 mS/um at V<sub>ds</sub> = 0.5 V and L<sub>g</sub> = 52 nm is achieved. We also report on radio-frequency (RF) measurements, with extrapolated cut-off frequency of f<sub>t</sub> = 281 GHz and maximum oscillation frequency f<sub>max</sub> = 365 GHz.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128760025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Lateral versus vertical gate-all-around FETs for beyond 7nm technologies 横向与垂直栅极全能fet的7nm以上技术
72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872333
D. Yakimets, T. H. Bao, M. Bardon, M. Dehan, N. Collaert, A. Mercha, Z. Tokei, A. Thean, D. Verkest, K. De Meyer
{"title":"Lateral versus vertical gate-all-around FETs for beyond 7nm technologies","authors":"D. Yakimets, T. H. Bao, M. Bardon, M. Dehan, N. Collaert, A. Mercha, Z. Tokei, A. Thean, D. Verkest, K. De Meyer","doi":"10.1109/DRC.2014.6872333","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872333","url":null,"abstract":"Nominal LG VFET-based RO may operate up to ~60% faster than LFET-based RO at the same energy per switch for both 7nm and 5nm technology nodes depending on the layout and BEOL-load. With VFETs, relaxing the LG is possible and it results in an extra 27% in IEFF in comparison to the nominal LG case. In addition, VFETs enable different layouts, which can be used to optimize performance under certain BEOL-load. Introduction of VFETs is more favorable at the 5nm node than at the 7nm node. As such, VFETs show a performance competitive path for continued scaling beyond 7nm technologies.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129921153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信