S. Fathipour, Huilong Xu, Erich W Kinder, S. Fullerton‐Shirey, A. Seabaugh
{"title":"用于WSe2场效应晶体管离子掺杂的聚乙烯-氧化物铯-高氯酸盐固体聚合物电解质老化与修复研究","authors":"S. Fathipour, Huilong Xu, Erich W Kinder, S. Fullerton‐Shirey, A. Seabaugh","doi":"10.1109/DRC.2014.6872329","DOIUrl":null,"url":null,"abstract":"Transition metal dichalcogenides (TMDs) are of interest for tunnel field-effect transistors (TFETs) [1]. Their ultrathin body, absence of dangling bonds and native oxides, robustness to short channel effects, dielectric mediated mobilities, and the presence of a band gap are all favorable for use in TFETs. However, doping methods are needed for TMDs to create the p-n junction required for the TFET. Charge transfer doping [2] and ion-doping using solid polymers [3] are two approaches being explored. In this paper we show for the first time, the use of polyethylene oxide (PEO) and the salt, CsClO4, to induce both n and p channel conductivity in exfoliated WSe2 FETs.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Investigation of aging and restoration of polyethylene-oxide cesium-perchlorate solid polymer electrolyte used for ion doping of a WSe2 field-effect transistor\",\"authors\":\"S. Fathipour, Huilong Xu, Erich W Kinder, S. Fullerton‐Shirey, A. Seabaugh\",\"doi\":\"10.1109/DRC.2014.6872329\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Transition metal dichalcogenides (TMDs) are of interest for tunnel field-effect transistors (TFETs) [1]. Their ultrathin body, absence of dangling bonds and native oxides, robustness to short channel effects, dielectric mediated mobilities, and the presence of a band gap are all favorable for use in TFETs. However, doping methods are needed for TMDs to create the p-n junction required for the TFET. Charge transfer doping [2] and ion-doping using solid polymers [3] are two approaches being explored. In this paper we show for the first time, the use of polyethylene oxide (PEO) and the salt, CsClO4, to induce both n and p channel conductivity in exfoliated WSe2 FETs.\",\"PeriodicalId\":293780,\"journal\":{\"name\":\"72nd Device Research Conference\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"72nd Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2014.6872329\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"72nd Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2014.6872329","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Investigation of aging and restoration of polyethylene-oxide cesium-perchlorate solid polymer electrolyte used for ion doping of a WSe2 field-effect transistor
Transition metal dichalcogenides (TMDs) are of interest for tunnel field-effect transistors (TFETs) [1]. Their ultrathin body, absence of dangling bonds and native oxides, robustness to short channel effects, dielectric mediated mobilities, and the presence of a band gap are all favorable for use in TFETs. However, doping methods are needed for TMDs to create the p-n junction required for the TFET. Charge transfer doping [2] and ion-doping using solid polymers [3] are two approaches being explored. In this paper we show for the first time, the use of polyethylene oxide (PEO) and the salt, CsClO4, to induce both n and p channel conductivity in exfoliated WSe2 FETs.