用于WSe2场效应晶体管离子掺杂的聚乙烯-氧化物铯-高氯酸盐固体聚合物电解质老化与修复研究

S. Fathipour, Huilong Xu, Erich W Kinder, S. Fullerton‐Shirey, A. Seabaugh
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引用次数: 2

摘要

过渡金属二硫族化合物(TMDs)是隧道场效应晶体管(tfet)[1]的研究热点。它们的超薄体,没有悬空键和天然氧化物,对短通道效应的稳健性,电介质介导的迁移率以及带隙的存在都有利于在tfet中使用。然而,tmd需要掺杂方法来创建TFET所需的p-n结。电荷转移掺杂[2]和利用固体聚合物[3]进行离子掺杂是目前研究的两种方法。在本文中,我们首次展示了使用聚乙烯氧化物(PEO)和盐CsClO4在剥离的WSe2 fet中诱导n和p通道电导率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigation of aging and restoration of polyethylene-oxide cesium-perchlorate solid polymer electrolyte used for ion doping of a WSe2 field-effect transistor
Transition metal dichalcogenides (TMDs) are of interest for tunnel field-effect transistors (TFETs) [1]. Their ultrathin body, absence of dangling bonds and native oxides, robustness to short channel effects, dielectric mediated mobilities, and the presence of a band gap are all favorable for use in TFETs. However, doping methods are needed for TMDs to create the p-n junction required for the TFET. Charge transfer doping [2] and ion-doping using solid polymers [3] are two approaches being explored. In this paper we show for the first time, the use of polyethylene oxide (PEO) and the salt, CsClO4, to induce both n and p channel conductivity in exfoliated WSe2 FETs.
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