{"title":"采用选择性再生纳米线的In0.63Ga0.37As finfet在Vds = 0.5 V时的峰值跨导率为2.85 mS/μm","authors":"C. Zota, L. Wernersson, E. Lind","doi":"10.1109/DRC.2014.6872371","DOIUrl":null,"url":null,"abstract":"III-V materials such as In-rich In<sub>1-x</sub>Ga<sub>x</sub>As have attracted much attention for low-power applications due to their excellent electron transport properties. To suppress high off-currents in deeply scaled devices, multi-gate MOSFETs (MuGFETs) such as FinFETs, which have improved electrostatic integrity, may be employed [1]. We have previously demonstrated In<sub>0.53</sub>Ga<sub>0.47</sub>As FinFETs utilizing selectively regrown nanowires as channel [2]. In this work we report on the next generation of these devices, with increased In-content in the channel, scaled down nanowire dimensions and improved contacts. A record-value of peak transconductance g<sub>m, peak</sub> = 2.85 mS/um at V<sub>ds</sub> = 0.5 V and L<sub>g</sub> = 52 nm is achieved. We also report on radio-frequency (RF) measurements, with extrapolated cut-off frequency of f<sub>t</sub> = 281 GHz and maximum oscillation frequency f<sub>max</sub> = 365 GHz.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"In0.63Ga0.37As FinFETs using selectively regrown nanowires with peak transconductance of 2.85 mS/μm at Vds = 0.5 V\",\"authors\":\"C. Zota, L. Wernersson, E. Lind\",\"doi\":\"10.1109/DRC.2014.6872371\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"III-V materials such as In-rich In<sub>1-x</sub>Ga<sub>x</sub>As have attracted much attention for low-power applications due to their excellent electron transport properties. To suppress high off-currents in deeply scaled devices, multi-gate MOSFETs (MuGFETs) such as FinFETs, which have improved electrostatic integrity, may be employed [1]. We have previously demonstrated In<sub>0.53</sub>Ga<sub>0.47</sub>As FinFETs utilizing selectively regrown nanowires as channel [2]. In this work we report on the next generation of these devices, with increased In-content in the channel, scaled down nanowire dimensions and improved contacts. A record-value of peak transconductance g<sub>m, peak</sub> = 2.85 mS/um at V<sub>ds</sub> = 0.5 V and L<sub>g</sub> = 52 nm is achieved. We also report on radio-frequency (RF) measurements, with extrapolated cut-off frequency of f<sub>t</sub> = 281 GHz and maximum oscillation frequency f<sub>max</sub> = 365 GHz.\",\"PeriodicalId\":293780,\"journal\":{\"name\":\"72nd Device Research Conference\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"72nd Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2014.6872371\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"72nd Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2014.6872371","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In0.63Ga0.37As FinFETs using selectively regrown nanowires with peak transconductance of 2.85 mS/μm at Vds = 0.5 V
III-V materials such as In-rich In1-xGaxAs have attracted much attention for low-power applications due to their excellent electron transport properties. To suppress high off-currents in deeply scaled devices, multi-gate MOSFETs (MuGFETs) such as FinFETs, which have improved electrostatic integrity, may be employed [1]. We have previously demonstrated In0.53Ga0.47As FinFETs utilizing selectively regrown nanowires as channel [2]. In this work we report on the next generation of these devices, with increased In-content in the channel, scaled down nanowire dimensions and improved contacts. A record-value of peak transconductance gm, peak = 2.85 mS/um at Vds = 0.5 V and Lg = 52 nm is achieved. We also report on radio-frequency (RF) measurements, with extrapolated cut-off frequency of ft = 281 GHz and maximum oscillation frequency fmax = 365 GHz.
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