Edwin W. Lee, Lu Ma, D. Nath, C. Lee, Yiying Wu, S. Rajan
{"title":"2D/3D p-MoS2/n-SiC结的演示","authors":"Edwin W. Lee, Lu Ma, D. Nath, C. Lee, Yiying Wu, S. Rajan","doi":"10.1109/DRC.2014.6872306","DOIUrl":null,"url":null,"abstract":"In this work, we demonstrate 2D/3D heterojunction using large-area crystalline p-MoS2 epitaxially grown on n-doped 4H-SiC. The diode exhibited excellent rectification with an ideality factor of 1.5, as well as C-V characteristics typical of an anisotype p-n junction. Besides being promising for enabling novel device topologies, this realization of a p-type 2D/n-type 3D heterostructure holds potential for circumventing challenges associated with p-doping in wide bandgap (WBG) semiconductors which has otherwise held back the successful development of bipolar devices in WBG systems.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Demonstration of 2D/3D p-MoS2/n-SiC junction\",\"authors\":\"Edwin W. Lee, Lu Ma, D. Nath, C. Lee, Yiying Wu, S. Rajan\",\"doi\":\"10.1109/DRC.2014.6872306\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we demonstrate 2D/3D heterojunction using large-area crystalline p-MoS2 epitaxially grown on n-doped 4H-SiC. The diode exhibited excellent rectification with an ideality factor of 1.5, as well as C-V characteristics typical of an anisotype p-n junction. Besides being promising for enabling novel device topologies, this realization of a p-type 2D/n-type 3D heterostructure holds potential for circumventing challenges associated with p-doping in wide bandgap (WBG) semiconductors which has otherwise held back the successful development of bipolar devices in WBG systems.\",\"PeriodicalId\":293780,\"journal\":{\"name\":\"72nd Device Research Conference\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"72nd Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2014.6872306\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"72nd Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2014.6872306","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this work, we demonstrate 2D/3D heterojunction using large-area crystalline p-MoS2 epitaxially grown on n-doped 4H-SiC. The diode exhibited excellent rectification with an ideality factor of 1.5, as well as C-V characteristics typical of an anisotype p-n junction. Besides being promising for enabling novel device topologies, this realization of a p-type 2D/n-type 3D heterostructure holds potential for circumventing challenges associated with p-doping in wide bandgap (WBG) semiconductors which has otherwise held back the successful development of bipolar devices in WBG systems.
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