Demonstration of 2D/3D p-MoS2/n-SiC junction

Abstract

In this work, we demonstrate 2D/3D heterojunction using large-area crystalline p-MoS2 epitaxially grown on n-doped 4H-SiC. The diode exhibited excellent rectification with an ideality factor of 1.5, as well as C-V characteristics typical of an anisotype p-n junction. Besides being promising for enabling novel device topologies, this realization of a p-type 2D/n-type 3D heterostructure holds potential for circumventing challenges associated with p-doping in wide bandgap (WBG) semiconductors which has otherwise held back the successful development of bipolar devices in WBG systems.