{"title":"All-CVD graphene field-effect transistors with h-BN gate dielectric and local back gate","authors":"M. Ebrish, S. Koester","doi":"10.1109/DRC.2014.6872297","DOIUrl":null,"url":null,"abstract":"We have demonstrated operation of locally backgated graphene gFETs with CVD-grown h-BN and graphene, and the results provide important insights into the impact of h-BN on the transport and interfacial properties of these devices.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"05 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"72nd Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2014.6872297","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We have demonstrated operation of locally backgated graphene gFETs with CVD-grown h-BN and graphene, and the results provide important insights into the impact of h-BN on the transport and interfacial properties of these devices.