{"title":"门控压阻GaN微悬臂作为声换能器","authors":"A. Talukdar, G. Koley","doi":"10.1109/DRC.2014.6872292","DOIUrl":null,"url":null,"abstract":"In this article, we present for the first time, transduction of ultrasonic acoustic pressure using a gated piezoresistive AlGaN/GaN Heterojunction Field Effect Transistor (HFET) integrated on GaN microcantilever. With a periodic pressure generated in air, the microcantilever was found to oscillate, and the HFET was able to transduce the pressure variation of 150.4 μPa in ambient conditions with a tunable linear sensitivity of 33.2 mV/Pa, response time <; 40 ms, and power consumption of 45 μW. The device demonstrates 3 orders higher pressure sensitivity than simple piezoresistor, and also higher than the sensitivity of commercially available Knowles microphone; thereby offering a promising alternative for cantilever enhanced photoacoustic spectroscopy (PAS).","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Gated piezoresistive GaN microcantilever as an acoustic transducer\",\"authors\":\"A. Talukdar, G. Koley\",\"doi\":\"10.1109/DRC.2014.6872292\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this article, we present for the first time, transduction of ultrasonic acoustic pressure using a gated piezoresistive AlGaN/GaN Heterojunction Field Effect Transistor (HFET) integrated on GaN microcantilever. With a periodic pressure generated in air, the microcantilever was found to oscillate, and the HFET was able to transduce the pressure variation of 150.4 μPa in ambient conditions with a tunable linear sensitivity of 33.2 mV/Pa, response time <; 40 ms, and power consumption of 45 μW. The device demonstrates 3 orders higher pressure sensitivity than simple piezoresistor, and also higher than the sensitivity of commercially available Knowles microphone; thereby offering a promising alternative for cantilever enhanced photoacoustic spectroscopy (PAS).\",\"PeriodicalId\":293780,\"journal\":{\"name\":\"72nd Device Research Conference\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"72nd Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2014.6872292\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"72nd Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2014.6872292","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Gated piezoresistive GaN microcantilever as an acoustic transducer
In this article, we present for the first time, transduction of ultrasonic acoustic pressure using a gated piezoresistive AlGaN/GaN Heterojunction Field Effect Transistor (HFET) integrated on GaN microcantilever. With a periodic pressure generated in air, the microcantilever was found to oscillate, and the HFET was able to transduce the pressure variation of 150.4 μPa in ambient conditions with a tunable linear sensitivity of 33.2 mV/Pa, response time <; 40 ms, and power consumption of 45 μW. The device demonstrates 3 orders higher pressure sensitivity than simple piezoresistor, and also higher than the sensitivity of commercially available Knowles microphone; thereby offering a promising alternative for cantilever enhanced photoacoustic spectroscopy (PAS).