A. Orlov, P. Fay, G. Snider, X. Jehl, S. Barraud, M. Sanquer
{"title":"Detection of the first charged states in ultrasmall Si single-hole transistor using dual-channel radio frequency reflectometry","authors":"A. Orlov, P. Fay, G. Snider, X. Jehl, S. Barraud, M. Sanquer","doi":"10.1109/DRC.2014.6872308","DOIUrl":null,"url":null,"abstract":"Si CMOS single-electron transistors (SET) fabricated using fully depleted SOI [1] enable an understanding of charging mechanisms in ultimately scaled CMOS devices down to a transport through a single dopant [2]. A schematic representation of such a device is shown in Fig 1. Radio-frequency (RF) reflectometry [3] is an effective tool for charge detection in various single-electron systems. Since it does not require any DC current flow the detection of electrons passing even through a single tunnel junction [4] is possible. When a Si SET is populated with electrons, one intriguing question need to be answered: where do the first charge carriers spatially accumulate during the formation of the conducting “island”? To address this issue we use a dual channel technique that enables spatial identification of charging processes within the device. Here we present results obtained using this technique for single-hole transistors (SHT). A micrograph of a typical studied SHT device.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"72nd Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2014.6872308","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Si CMOS single-electron transistors (SET) fabricated using fully depleted SOI [1] enable an understanding of charging mechanisms in ultimately scaled CMOS devices down to a transport through a single dopant [2]. A schematic representation of such a device is shown in Fig 1. Radio-frequency (RF) reflectometry [3] is an effective tool for charge detection in various single-electron systems. Since it does not require any DC current flow the detection of electrons passing even through a single tunnel junction [4] is possible. When a Si SET is populated with electrons, one intriguing question need to be answered: where do the first charge carriers spatially accumulate during the formation of the conducting “island”? To address this issue we use a dual channel technique that enables spatial identification of charging processes within the device. Here we present results obtained using this technique for single-hole transistors (SHT). A micrograph of a typical studied SHT device.