高性能柔性CMOS SOI finfet

H. Fahad, G. T. Sevilla, M. Ghoneim, M. Hussain
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引用次数: 1

摘要

我们展示了有史以来第一个CMOS兼容软蚀刻背的高性能柔性CMOS SOI finfet。从平面到非平面finfet的转变使得持续缩小到14nm技术节点成为可能。这是可能的,因为由于多个栅极的优越静电电荷控制,减少了非状态泄漏和减少了短通道效应。与此同时,柔性电子产品是下一代电子产品的一个令人兴奋的扩展机会。然而,一个完全集成的低成本系统将需要保持超大规模的集成密度、高性能和可靠性——就像今天的传统电子产品一样。直到最近,该领域主要由低温工艺实现的性能非常弱的有机电子产品主导,有利于低熔点塑料。然而,现在我们展示了世界上性能最高的3D FinFET CMOS柔性版本,采用最先进的CMOS兼容制造技术,用于高性能超移动消费应用,具有时尚的设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High performance flexible CMOS SOI FinFETs
We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due to the reduction in off-state leakage and reduced short channel effects on account of the superior electrostatic charge control of multiple gates. At the same time, flexible electronics is an exciting expansion opportunity for next generation electronics. However, a fully integrated low-cost system will need to maintain ultra-large-scale-integration density, high performance and reliability - same as today's traditional electronics. Up until recently, this field has been mainly dominated by very weak performance organic electronics enabled by low temperature processes, conducive to low melting point plastics. Now however, we show the world's highest performing flexible version of 3D FinFET CMOS using a state-of-the-art CMOS compatible fabrication technique for high performance ultra-mobile consumer applications with stylish design.
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