W. Rieutort-Louis, Liechao Huang, Yingzhe Hu, J. Sanz-Robinson, T. Moy, Y. Afsar, J. Sturm, N. Verma, S. Wagner
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引用次数: 5
摘要
在本文中，我们(1)展示了标准底栅非晶硅(a- si) TFT和自对准底栅a- si TFT的above-ft测量结果，(2)说明了在高于ft的频率下，TFT的栅极漏极电容如何导致缓慢的电流增益滚降。
Current gain of amorphous silicon thin-film transistors above the cutoff frequency
In this paper we (1) show above-ft measurements for standard bottom-gate amorphous silicon (a-Si) TFTs and self-aligned bottom-gate a-Si TFTs and (2) illustrate how large TFT gate-drain capacitances lead to a slow current-gain roll-off at frequencies above ft.
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