Enhancement-mode Al2O3/InAlN/GaN MOS-HEMT on Si with high drain current density 0.84 A/mm and threshold voltage of +1.9 V

J. Freedsman, A. Watanabe, T. Egawa
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引用次数: 3

Abstract

In the last decade, AlGaN/GaN based Enhancement-mode (E-mode) devices on Si substrate have been studied extensively [1-3]. In spite of improvements in the threshold voltage (Vth), the AlGaN/GaN E-mode devices could not show high drain current density (Idsmax), which is highly desirable for automotive applications [4, 5]. Alternatively, InAlN/GaN based E-mode devices are preferred for high-temperature and high-speed applications. A few research groups have demonstrated InAlN/GaN based E-mode devices mainly on SiC and sapphire substrates [6-9]. The main focus in this work is to demonstrate high performance InAlN/GaN based E-Mode metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMT) on low cost Si.
硅基上Al2O3/InAlN/GaN增强型MOS-HEMT的漏极电流密度为0.84 A/mm,阈值电压为+1.9 V
在过去的十年中,基于Si衬底的AlGaN/GaN增强模式(E-mode)器件得到了广泛的研究[1-3]。尽管阈值电压(Vth)有所改善,但AlGaN/GaN e模式器件无法显示高漏极电流密度(Idsmax),这对于汽车应用来说是非常理想的[4,5]。另外,基于InAlN/GaN的E-mode器件是高温和高速应用的首选。一些研究小组已经展示了主要在SiC和蓝宝石衬底上基于InAlN/GaN的e模式器件[6-9]。本工作的主要重点是在低成本Si上展示高性能的基于InAlN/GaN的E-Mode金属氧化物半导体高电子迁移率晶体管(MOS-HEMT)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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