{"title":"Enhancement-mode Al2O3/InAlN/GaN MOS-HEMT on Si with high drain current density 0.84 A/mm and threshold voltage of +1.9 V","authors":"J. Freedsman, A. Watanabe, T. Egawa","doi":"10.1109/DRC.2014.6872294","DOIUrl":null,"url":null,"abstract":"In the last decade, AlGaN/GaN based Enhancement-mode (E-mode) devices on Si substrate have been studied extensively [1-3]. In spite of improvements in the threshold voltage (Vth), the AlGaN/GaN E-mode devices could not show high drain current density (Idsmax), which is highly desirable for automotive applications [4, 5]. Alternatively, InAlN/GaN based E-mode devices are preferred for high-temperature and high-speed applications. A few research groups have demonstrated InAlN/GaN based E-mode devices mainly on SiC and sapphire substrates [6-9]. The main focus in this work is to demonstrate high performance InAlN/GaN based E-Mode metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMT) on low cost Si.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"323 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"72nd Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2014.6872294","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
In the last decade, AlGaN/GaN based Enhancement-mode (E-mode) devices on Si substrate have been studied extensively [1-3]. In spite of improvements in the threshold voltage (Vth), the AlGaN/GaN E-mode devices could not show high drain current density (Idsmax), which is highly desirable for automotive applications [4, 5]. Alternatively, InAlN/GaN based E-mode devices are preferred for high-temperature and high-speed applications. A few research groups have demonstrated InAlN/GaN based E-mode devices mainly on SiC and sapphire substrates [6-9]. The main focus in this work is to demonstrate high performance InAlN/GaN based E-Mode metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMT) on low cost Si.