Enhancement-mode Al2O3/InAlN/GaN MOS-HEMT on Si with high drain current density 0.84 A/mm and threshold voltage of +1.9 V

Abstract

In the last decade, AlGaN/GaN based Enhancement-mode (E-mode) devices on Si substrate have been studied extensively [1-3]. In spite of improvements in the threshold voltage (Vth), the AlGaN/GaN E-mode devices could not show high drain current density (Idsmax), which is highly desirable for automotive applications [4, 5]. Alternatively, InAlN/GaN based E-mode devices are preferred for high-temperature and high-speed applications. A few research groups have demonstrated InAlN/GaN based E-mode devices mainly on SiC and sapphire substrates [6-9]. The main focus in this work is to demonstrate high performance InAlN/GaN based E-Mode metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMT) on low cost Si.