Low-power organic electronics based on gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures

H. Hlaing, F. Carta, Robert A. Barton, C. Nam, Nicholas Petrone, J. Hone, I. Kymissis
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引用次数: 2

Abstract

Novel device architectures based on heterostructures of graphene with semiconductor layers have recently attracted considerable interest due to their potential in a wide range of electronic and photonic applications. The key concept in these devices is to exploit the work function tunability of graphene via external gate field to modulate the current flow across the graphene-semiconductor junction by adjusting the Schottky barrier height. Transistor devices based on a vertical heterojunction of graphene with inorganic semiconductors (n- and p-type Silicon) [1], oxide semiconductor (n-type indium gallium zinc oxide) [2,3] and flakes of 2D layered materials (molybdenum disulfide, tungsten disulfide) [4-7] have been successfully fabricated with a high on/off ratio, overcoming the limitation of planar graphene field-effect devices. We demonstrate, for the first time, low-voltage complementary p- and n-channel vertical organic thin film transistors (VOTFTs) based on the graphene-organic semiconductor heterojunctions with simple, scalable and low-temperature fabrication process. VOTFT device with thin layer of prototypical n-type organic semiconductor C60 exhibits high on-current densities in the range of 10 mA/cm2 with the driving voltage of only 1 V suppressing the output current of traditional planar organic field-effect transistors. It can also operate at the bias as low as 200 mV with high on/off ratio (~103). For low-power logic application, complementary VOTFT devices with prototypical p-type organic semiconductors (CuPc, Pentacene, α-6T, Rubrene) are also investigated.
垂直石墨烯-有机半导体异质结构中基于栅极可调注入势垒的低功耗有机电子学
基于具有半导体层的石墨烯异质结构的新型器件架构由于其在广泛的电子和光子应用中的潜力,最近引起了相当大的兴趣。这些器件的关键概念是通过外部栅极场利用石墨烯的功函数可调性,通过调节肖特基势垒高度来调制穿过石墨烯-半导体结的电流。基于石墨烯与无机半导体(n型和p型硅)[1]、氧化物半导体(n型铟镓氧化锌)[2,3]和二维层状材料薄片(二硫化钼、二硫化钨)[4-7]的垂直异质结的晶体管器件已经成功制成,具有高开/关比,克服了平面石墨烯场效应器件的局限性。我们首次展示了基于石墨烯-有机半导体异质结的低电压互补p沟道和n沟道垂直有机薄膜晶体管(VOTFTs),具有简单,可扩展和低温制造工艺。采用典型n型有机半导体C60薄层的VOTFT器件具有10 mA/cm2的高导通电流密度,驱动电压仅为1 V,可抑制传统平面有机场效应晶体管的输出电流。它还可以在低至200 mV的偏置下工作,具有高开/关比(~103)。对于低功耗逻辑应用,还研究了具有原型p型有机半导体(CuPc, Pentacene, α-6T, Rubrene)的互补VOTFT器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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