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Steep slope VO2 switches for wide-band (DC-40 GHz) reconfigurable electronics 用于宽带(DC-40 GHz)可重构电子器件的陡坡VO2开关
72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872284
W. Vitale, A. Paone, M. Fernandez-Bolaños, A. Bazigos, W. Grabinski, A. Schuler, A. Ionescu
{"title":"Steep slope VO2 switches for wide-band (DC-40 GHz) reconfigurable electronics","authors":"W. Vitale, A. Paone, M. Fernandez-Bolaños, A. Bazigos, W. Grabinski, A. Schuler, A. Ionescu","doi":"10.1109/DRC.2014.6872284","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872284","url":null,"abstract":"This work proves the feasibility of electrically actuated, CMOS compatible, microwave VO<sub>2</sub> switches on SiO<sub>2</sub>/Si substrates with low variability, 100% yield, better than 109 cycles lifetime, ultra-steep OFF-ON transition and better RF performance than previously reported VO<sub>2</sub> switches on Al<sub>2</sub>O<sub>3</sub> substrates (flat -0.6 dB S<sub>21-ON</sub> with -10 dB S<sub>21-OFF</sub> at 40 GHz). The extensive characterization of the fabricated switches has led to an optimum design with maximized S<sub>21-ON</sub>/S<sub>21-OFF</sub> ratio and validation as a promising solution for wideband reconfigurable electronics.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127127963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Sub-volt drive voltage, ultra wide bandwidth substrate removed electro-optic modulators 亚伏驱动电压，超宽带基板去除电光调制器
72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872289
S. Dogru, N. Dagli
{"title":"Sub-volt drive voltage, ultra wide bandwidth substrate removed electro-optic modulators","authors":"S. Dogru, N. Dagli","doi":"10.1109/DRC.2014.6872289","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872289","url":null,"abstract":"This paper reports for the first time a 0.77 V Vπ modulator with larger than 67 GHz bandwidth. Such a device can be directly driven without an external modulator driver and enables applications that deliver ultra wide bandwidths needed in fiber optic communications.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124163690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InGaAs/GaAsSb interband tunneling FETs as tunable RF detectors InGaAs/GaAsSb带间隧道场效应管作为可调谐射频探测器
72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872280
W. Li, T. Yu, J. Hoyt, P. Fay
{"title":"InGaAs/GaAsSb interband tunneling FETs as tunable RF detectors","authors":"W. Li, T. Yu, J. Hoyt, P. Fay","doi":"10.1109/DRC.2014.6872280","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872280","url":null,"abstract":"III-V based tunnel FETs (TFETs) have attracted wide interest for the promise of achieving sub-thermionic switching slopes (<; 60 mV/decade) to enable continued power-constrained scaling for logic. These same characteristics, however also offer advantages for non-logic applications; in particular, the strong nonlinearity in the transfer characteristics - a function of the energy filtering inherent with interband tunneling - makes these devices attractive candidates for nonlinear analog applications such as high-frequency detection for imaging and sensing, and the input/output isolation afforded by use of a three-terminal device for detection offers considerable advantages for system design, compared to two-terminal devices (e.g. bulky and bandwidth-limiting RF/DC separation circuits are not required). We report here the first experimental demonstration of an III-V interband tunnel FET as an RF detector.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132332025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Common emitter operation of III-N HETs using AlGaN and InGaN polarization-dipole induced barriers 利用AlGaN和InGaN极化偶极子诱导势垒的III-N HETs共发射极操作
72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872394
G. Gupta, M. Laurent, Haoran Li, D. J. Suntrup, E. Acuna, S. Keller, U. Mishra
{"title":"Common emitter operation of III-N HETs using AlGaN and InGaN polarization-dipole induced barriers","authors":"G. Gupta, M. Laurent, Haoran Li, D. J. Suntrup, E. Acuna, S. Keller, U. Mishra","doi":"10.1109/DRC.2014.6872394","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872394","url":null,"abstract":"In conclusion, we show that injection energy and base thickness are the critical parameters for achieving gain in III-N HETs. It is important to make sure that high leakage currents and large base resistance do not result in inaccurate extraction of gain and transfer ratio. A better understanding of the design space is required to achieve CE current gain and move towards our goal of building a high-frequency III-N HET.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131800482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Compact optical sensing systems 紧凑型光学传感系统
72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872290
N. Johnson
{"title":"Compact optical sensing systems","authors":"N. Johnson","doi":"10.1109/DRC.2014.6872290","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872290","url":null,"abstract":"Optoelectronic devices and techniques are major enablers of compact sensing systems for a wide range of applications that address medical, industrial, civil, defense, and consumer needs. Our vision is to miniaturize devices and systems while enhancing functionality and accessibility. Many challenges confront this endeavor, for example, the size and cost of existing components, need for continuous detection, low light intensities that result from small sensing volume and weak light-target interaction, and detection in complex fluids. Our general strategy is to identify the specific information required for the application, incorporate signal processing (electronics & software) to reduce complexity and cost of the optoelectronic subsystems, improve signal-to-noise discrimination, and integrate all components. Two technologies will be described to illustrate our approach. The first is a compact, low-cost wavelength monitor. The innovation will be illustrated with two examples: (1) precise measurement of the wavelength of individual laser pulses, for applications such as LIDAR, and (2) an optically-based monitoring system prototype targeting batteries for electric vehicles. The system will combine fiber optic sensors embedded inside lithium-ion battery cells with the wavelength-shift detector and intelligent algorithms to measure parameters indicative of cell state and enable responsive real-time performance management. The second technology is a miniaturized opto-fluidic system for on-the-flow analyte characterization. The enabling innovation is termed “spatially modulated emission” and uses signal processing (via electronics & software) to reduce complexity and cost of the optical detection subsystem while maintaining high performance. The technique will be illustrated with CD4% counting in whole blood and pathogen detection in water.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134338128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrostatic cross-talk to define the density limit of aligned-array phase-change-memory with carbon nanotube electrodes 用静电串扰确定碳纳米管电极排列阵列相变存储器的密度极限
72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872312
M. A. Wahab, M. Alam
{"title":"Electrostatic cross-talk to define the density limit of aligned-array phase-change-memory with carbon nanotube electrodes","authors":"M. A. Wahab, M. Alam","doi":"10.1109/DRC.2014.6872312","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872312","url":null,"abstract":"We find that electrostatic cross-talk may define the ultimate density limit of SWNT-PCM memory, by making co-programming of neighboring cells difficult. Scaling of the nanogap or structures free of broken tubes promise denser arrays, but the practical and economic viability of these approaches remain a concern.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134561204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Correlating interface chemistry and device behavior 关联界面化学和器件行为
72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872361
R. Wallace
{"title":"Correlating interface chemistry and device behavior","authors":"R. Wallace","doi":"10.1109/DRC.2014.6872361","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872361","url":null,"abstract":"The prospect of introducing alternative materials as a carrier transport channel in a variety of field effect devices has resulted in a resurgence of interface research. A key aspect includes the nature of the defects that influence the electrical behavior in the MOS gate stack, and their location. This invited talk will overview selected examples from our recent studies of III-V and 2D interfaces with high-k dielectrics and contacts using in-situ deposition and analysis methods. [1-73].","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133225521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra-thin-body self-aligned InGaAs MOSFETs on insulator (III-V-O-I) by a tight-pitch process 绝缘子(III-V-O-I)上的超薄体自对准InGaAs mosfet
72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872375
Jianqiang Lin, L. Czornomaz, N. Daix, D. Antoniadis, J. D. del Alamo
{"title":"Ultra-thin-body self-aligned InGaAs MOSFETs on insulator (III-V-O-I) by a tight-pitch process","authors":"Jianqiang Lin, L. Czornomaz, N. Daix, D. Antoniadis, J. D. del Alamo","doi":"10.1109/DRC.2014.6872375","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872375","url":null,"abstract":"We report a self-aligned InGaAs Quantum-Well MOSFET (QW-MOSFET) on III-V-O-I substrate fabricated through a tight-pitch process. The ultra-thin body (UTB) III-V-O-I layer structure was fabricated on Si through a direct bonding technique. The III-V MOSFETs, with a self-aligned gate and metal contacts, were fabricated by a gate-last method. For the first time, we demonstrate adjacent devices with contact metal spacing of 150 nm. The fabrication features CMOS compatibility with a wet-etch free, lift-off free and Au-free process in the front end. Transport and short-channel effects (SCE) are studied as a function of back bias. Excellent SCE control is obtained with DIBL and subthreshold swing benchmarked against state-of-the-art III-V-O-I data. The reported technology provides a new path to integrate III-V front-end devices for future high density circuit applications.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"14 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116814619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Bi-metallic and mono-metallic antenna-coupled nanoscale thermocouples for infrared detection 用于红外探测的双金属和单金属天线耦合纳米热电偶
72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872300
G. Szakmany, A. Orlov, G. Bernstein, W. Porod
{"title":"Bi-metallic and mono-metallic antenna-coupled nanoscale thermocouples for infrared detection","authors":"G. Szakmany, A. Orlov, G. Bernstein, W. Porod","doi":"10.1109/DRC.2014.6872300","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872300","url":null,"abstract":"Infrared detectors in the long-wave infrared range (LWIR) are of special interest since they are sensitive to blackbody radiation of objects at room temperature, with a wide range of applications. In previous work, we have reported bi-metallic antenna-coupled infrared detectors for the LWIR [1], and here we report novel mono-metallic antenna-coupled infrared detectors, as well as a comparison between the two. Such antenna-coupled thermocouples are promising candidates for various applications including energy harvesting [2], target tracking [3], and thermal imaging. These detectors operate without the need of any bias or cooling. The antenna design determines the resonant frequency, directivity, and polarization of these detectors.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"204 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127406338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
InAs gate-all-around nanowire MOSFETs by top-down approach 自顶向下方法的栅极全能纳米线mosfet
72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872373
H. Wu, X. Lou, M. Si, J. Zhang, R. Gordon, V. Tokranov, S. Oktyabrsky, P. Ye
{"title":"InAs gate-all-around nanowire MOSFETs by top-down approach","authors":"H. Wu, X. Lou, M. Si, J. Zhang, R. Gordon, V. Tokranov, S. Oktyabrsky, P. Ye","doi":"10.1109/DRC.2014.6872373","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872373","url":null,"abstract":"InAs gate-all-around (GAA) nanowire MOSFETs are experimentally demonstrated for the first time by a top-down approach <sup>[1-3]</sup>. Thanks to the well-controlled nanowire release process and the novel ALD high-k/metal gate stack process, InAs nFETs with channel length (L<sub>ch</sub>) ranging from 380 to 20 nm and nanowire width (W<sub>NW</sub>) from 60 to 20 nm are achieved. With an EOT of 3.9 nm, high drain current of 4.3 A/mm at V<sub>ds</sub> = V<sub>gs</sub> = 2 V and maximum transconductance (g<sub>max</sub>) of 1.6 S/mm at V<sub>ds</sub> = 1 V are obtained in a device with W<sub>NW</sub> = 20 nm and L<sub>ch</sub> = 180 nm, normalized by the perimeter of the nanowires. A detailed scalability study (V<sub>TH</sub>, g<sub>m</sub>, I<sub>ds</sub> vs. L<sub>ch</sub>) was carried out. The devices in this study show strong dependence on the nanowire width and smaller nanowire size offers much enhanced electrical performance and better immunity from the short channel effects (SCEs).","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122919347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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