{"title":"用静电串扰确定碳纳米管电极排列阵列相变存储器的密度极限","authors":"M. A. Wahab, M. Alam","doi":"10.1109/DRC.2014.6872312","DOIUrl":null,"url":null,"abstract":"We find that electrostatic cross-talk may define the ultimate density limit of SWNT-PCM memory, by making co-programming of neighboring cells difficult. Scaling of the nanogap or structures free of broken tubes promise denser arrays, but the practical and economic viability of these approaches remain a concern.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electrostatic cross-talk to define the density limit of aligned-array phase-change-memory with carbon nanotube electrodes\",\"authors\":\"M. A. Wahab, M. Alam\",\"doi\":\"10.1109/DRC.2014.6872312\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We find that electrostatic cross-talk may define the ultimate density limit of SWNT-PCM memory, by making co-programming of neighboring cells difficult. Scaling of the nanogap or structures free of broken tubes promise denser arrays, but the practical and economic viability of these approaches remain a concern.\",\"PeriodicalId\":293780,\"journal\":{\"name\":\"72nd Device Research Conference\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"72nd Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2014.6872312\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"72nd Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2014.6872312","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrostatic cross-talk to define the density limit of aligned-array phase-change-memory with carbon nanotube electrodes
We find that electrostatic cross-talk may define the ultimate density limit of SWNT-PCM memory, by making co-programming of neighboring cells difficult. Scaling of the nanogap or structures free of broken tubes promise denser arrays, but the practical and economic viability of these approaches remain a concern.
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