利用AlGaN和InGaN极化偶极子诱导势垒的III-N HETs共发射极操作

72nd Device Research Conference Pub Date : 2014-06-22 DOI:10.1109/DRC.2014.6872394

G. Gupta, M. Laurent, Haoran Li, D. J. Suntrup, E. Acuna, S. Keller, U. Mishra

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引用次数: 2

摘要

综上所述，我们发现注入能量和基底厚度是III-N HETs中获得增益的关键参数。重要的是要确保高泄漏电流和大基极电阻不会导致不准确的提取增益和传输比。为了实现CE电流增益并实现构建高频III-N HET的目标，需要更好地理解设计空间。

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Common emitter operation of III-N HETs using AlGaN and InGaN polarization-dipole induced barriers

In conclusion, we show that injection energy and base thickness are the critical parameters for achieving gain in III-N HETs. It is important to make sure that high leakage currents and large base resistance do not result in inaccurate extraction of gain and transfer ratio. A better understanding of the design space is required to achieve CE current gain and move towards our goal of building a high-frequency III-N HET.

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72nd Device Research Conference

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