Steep slope VO2 switches for wide-band (DC-40 GHz) reconfigurable electronics

Abstract

This work proves the feasibility of electrically actuated, CMOS compatible, microwave VO₂ switches on SiO₂/Si substrates with low variability, 100% yield, better than 109 cycles lifetime, ultra-steep OFF-ON transition and better RF performance than previously reported VO₂ switches on Al₂O₃ substrates (flat -0.6 dB S_21-ON with -10 dB S_21-OFF at 40 GHz). The extensive characterization of the fabricated switches has led to an optimum design with maximized S_21-ON/S_21-OFF ratio and validation as a promising solution for wideband reconfigurable electronics.