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Proceedings of 4th International Conference on Solid-State and IC Technology最新文献

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Wafer bonding: an overview 晶圆键合:概述
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.500076
U. Gosele, M. Reiche, Q. Tong
{"title":"Wafer bonding: an overview","authors":"U. Gosele, M. Reiche, Q. Tong","doi":"10.1109/ICSICT.1995.500076","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.500076","url":null,"abstract":"Wafer bonding started as a specific way to fabricate inexpensive thick (>1 /spl mu/m) film silicon-on-insulator (SOI) materials of high quality. In the meantime, also ultrathin SOI layers can be produced by wafer bonding and proper thinning techniques. In addition, silicon wafer bonding has shown to be a versatile technique for fabricating sensors and actuators. Especially in this area it is desirable to perform bonding at a temperature as low as possible. Wafer bonding may also be used to produce combinations of materials which may differ in terms of structure, crystallinity or lattice constant. The last feature allows the fabrication of III-V compound combinations which are not lattice matched and may be used for vertical cavity surface emitting lasers.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126482857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Deep submicron technology and applications 深亚微米技术及其应用
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503379
Denton Wu
{"title":"Deep submicron technology and applications","authors":"Denton Wu","doi":"10.1109/ICSICT.1995.503379","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503379","url":null,"abstract":"A variety of deep submicron technologies have been developed in the project \"Deep Submicron structure and Mesoscopic physics\". A 93 nm linewidth pattern and a 0.3 /spl mu/m PHEMT were obtained by X-ray lithography with a synchrotron radiation source in BEPC NL. 0.1 /spl mu/m resolution was attained by electron beam lithography, which was performed in a modified NEC S-530 scanning electron microscope system. Microdisk lasers were fabricated by E-Beam direct writing combined with selective chemical etching processing. In addition, we successfully investigated an ICP dry etching system with a high density plasma and obtained a 0.4 /spl mu/m linewidth pattern. E-Beam doping is a new method to obtain 0.1 /spl mu/m shallow junction depth. We successfully apply the above technology and other alternative approaches for manufacture of 0.2 /spl mu/m Si MOSFET's, a 0.3 /spl mu/m PHEMT, a vacuum microelectronic diode array, etc. Adopted PECVD and Ar/sup +/ laser recrystallization technology combined with SiN/sub x/ barrier Si quantum micro crystals of nm size and photoluminescence were obtained.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114149542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A new determination method of very low Fe contamination by UFS UFS法测定极低铁污染的新方法
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503550
Dian-Tong Lu, Zheng Qingcheng, I. V. Mitchell, P. Hemment, H. Ryssel
{"title":"A new determination method of very low Fe contamination by UFS","authors":"Dian-Tong Lu, Zheng Qingcheng, I. V. Mitchell, P. Hemment, H. Ryssel","doi":"10.1109/ICSICT.1995.503550","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503550","url":null,"abstract":"We have produced very low Fe-dose (10/sup 8/-10/sup 9/ Fe/cm/sup 2/) implanted Si samples. A new method of Ultraviolet Fluorescence Spectra (UFS) measurements has been used to determine the contents of Fe on the surfaces of Fe-implanted samples. We find that the Fe-impurities have their own ultraviolet fluorescent peak wavelength at room temperature and their characteristic spectral peak intensities are proportional to the Fe-doses (Fe-concentrations) in Fe implanted Si samples. This method is very sensitive, efficient and nondestructive for testing the Fe contamination on silicon. Some SOI (Silicon on Insulator) wafers and VLSI chips were evaluated with the UFS method. The results indicate that the UFS method is able to measure the very low Fe-contamination. The limit is below (10/sup 8/-10/sup 9/) Fe/cm/sup 2/ or (10/sup 13/-10/sup 14/) Fe/cm/sup 3/ in Si samples.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"194 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116058979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A poly-silicon TFT model for circuit simulation 用于电路仿真的多晶硅TFT模型
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503365
X. Guan, Xiaoyan Liu, R. Han
{"title":"A poly-silicon TFT model for circuit simulation","authors":"X. Guan, Xiaoyan Liu, R. Han","doi":"10.1109/ICSICT.1995.503365","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503365","url":null,"abstract":"This paper presents a polysilicon thin film transistor (TFT) model for circuit simulation. In this model, the effects of grain boundaries on the turn-on behavior of polysilicon TFT is considered. The potential barrier height is expressed in terms of channel doping, gate oxide thickness, grain size and external gate biases. Based on this, the analytical I-V characteristics are obtained for circuit simulation. Comparisons between the model and the experimental data have been made.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116127334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Study of methods for measuring mechanical properties of thin films in microelectromechanical systems (MEMS) 微机电系统(MEMS)薄膜力学性能测量方法的研究
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503327
Q. Zou, Zhijian Li, Litian Liu
{"title":"Study of methods for measuring mechanical properties of thin films in microelectromechanical systems (MEMS)","authors":"Q. Zou, Zhijian Li, Litian Liu","doi":"10.1109/ICSICT.1995.503327","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503327","url":null,"abstract":"Novel stress measurement methods for determining both tensile and compressive stress and Young's modulus in surface micromachining are presented by investigating two techniques: (1) Beam Pull-in Voltage (V/sub PI/) and (2) Long Beam Deflection (LBD). Both tensile and compressive stress and Young's modulus of thin film can be derived by use of the V/sub PI/ method. In the LBD method, axial strain of beams can be converted into large transverse deflection which can be measured easily. These techniques have been analyzed, tested experimentally and comparison with other known stress measurement techniques show good consistency. Both techniques have been shown to be quite promising for simple and accurate on-chip thin-film stress measurements.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116254353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The properties of micromechanical resonator 微机械谐振器的特性
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503325
Zhoughe Jin, Yaolin Wang, Yigang Xu, Chung Ding
{"title":"The properties of micromechanical resonator","authors":"Zhoughe Jin, Yaolin Wang, Yigang Xu, Chung Ding","doi":"10.1109/ICSICT.1995.503325","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503325","url":null,"abstract":"A theoretical and experimental study is presented on the response of a micromechanical resonator. Emphasis is placed on the study of double frequency and nonlinear behaviour.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123759019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Photovoltaic actions in MPS structure [Al(Au)/Si/p-Si] MPS结构中的光伏作用[Al(Au)/Si/p-Si]
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.499272
Yan Wang, F. Yun, X. Liao, G. Kong
{"title":"Photovoltaic actions in MPS structure [Al(Au)/Si/p-Si]","authors":"Yan Wang, F. Yun, X. Liao, G. Kong","doi":"10.1109/ICSICT.1995.499272","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.499272","url":null,"abstract":"This communication gives the recent results about photovoltaic actions in a metal/porous silicon/p-type silicon (MPS) structure. The spectral response range is very wide from 350 nm to 1100 nm. The open circuit voltage increases linearly with decreasing of temperature, but has no longer a linear relationship with logarithm of the illuminated power density. These results can be explained on the basis of assuming that the metal/porous silicon (M/PS) Schottky junction plays a main role in the photovoltaic effects, while the PS/p-Si heterojunction impedes the carrier transport.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125260382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Device physics studies of large signal transient performance and large signal power amplification performance of 0.1 micron channel length thin film SOI/CMOS IC and 0.1 micron basewidth HBT MMIC's 器件物理研究了0.1微米通道长度薄膜SOI/CMOS IC和0.1微米基宽HBT MMIC的大信号瞬态性能和大信号功率放大性能
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503366
C. Huang, Y.H. Yang, G. Lee, G.C. Feng, T.J. Chi
{"title":"Device physics studies of large signal transient performance and large signal power amplification performance of 0.1 micron channel length thin film SOI/CMOS IC and 0.1 micron basewidth HBT MMIC's","authors":"C. Huang, Y.H. Yang, G. Lee, G.C. Feng, T.J. Chi","doi":"10.1109/ICSICT.1995.503366","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503366","url":null,"abstract":"Preliminary results are presented for device physics studies of large sigal transient performance and large signal power amplification of 0.1 micron channel length thin film SOI/CMOS IC and 0.1 micron base width HBT MMICs.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131497362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Using MODEL HDL in Laser Gate Array modelhdl在激光门阵列中的应用
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503377
Baoquan Xu, Da Wan
{"title":"Using MODEL HDL in Laser Gate Array","authors":"Baoquan Xu, Da Wan","doi":"10.1109/ICSICT.1995.503377","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503377","url":null,"abstract":"This paper describes the base structure and characteristic of MODEL HDL and MODEL silicon compiler. It gives an introduction of Laser Gate Array development system in which MODEL HDL and MODEL compiler are used as one of the most important parts of design software program. There are more than 40 Laser Gate Array ASICs completed by using MODEL HDL, and one of those as an example description of MODEL HDL is given in detail.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133575296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Introducing the space growth of GaAs single crystals 介绍了砷化镓单晶的空间生长
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.500169
L.Y. Lin, X. Zhong
{"title":"Introducing the space growth of GaAs single crystals","authors":"L.Y. Lin, X. Zhong","doi":"10.1109/ICSICT.1995.500169","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.500169","url":null,"abstract":"Three types of GaAs single crystals, i.e. Te-doped, Si-doped as well as semi-insulating GaAs (SI-GaAs) single crystals, have been grown in Chinese recoverable satellites. This paper reports the results of property investigations, including electrical, optical, opto-electrical properties and structural characteristics. The space-grown SI-GaAs single crystal is used for fabricating low noise FET devices, and interesting results are obtained.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127011676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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