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Proceedings of 4th International Conference on Solid-State and IC Technology最新文献

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Design considerations for a high performance OTA with fully differential gain enhancement 具有完全差分增益增强的高性能OTA的设计考虑
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.499647
G. Miao, Pushan Tang
{"title":"Design considerations for a high performance OTA with fully differential gain enhancement","authors":"G. Miao, Pushan Tang","doi":"10.1109/ICSICT.1995.499647","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.499647","url":null,"abstract":"A small-signal analysis of the basic active cascode gain-enhancement circuit is presented. The analysis results in a three-pole one-zero representation. It shows that although OTA's DC gain is boosted, its frequency response becomes worse because of two factors: a doublet and the lower nondominant pole. An effective compensation method is then introduced to reduce this effect. Based on the above results, the design of a high-performance OTA is presented which uses a fully differential gain-enhancement technique. This improves the settling behavior and reduces power and area.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127971491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The multilayer analysis of molecular effect in BF/sub 2//sup +/ implanted silicon using ellipsometric spectra 利用椭圆偏振光谱多层分析BF/sub //sup +/植入硅的分子效应
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503551
Wenyu Zhu, Xiaoqing Li, Chenglu Lin
{"title":"The multilayer analysis of molecular effect in BF/sub 2//sup +/ implanted silicon using ellipsometric spectra","authors":"Wenyu Zhu, Xiaoqing Li, Chenglu Lin","doi":"10.1109/ICSICT.1995.503551","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503551","url":null,"abstract":"The damage layer of ion implantation has been supposed to consist of 50 differential zones to investigate the molecular effect of BF/sub 2//sup +/ implanted silicon. The ellipsometric spectra (photon energy: 1.6-5.0 eV) were measured for samples implanted with 147 keV BF/sub 2//sup +/ molecular ions at the dose range from 3/spl times/x10/sup 13/ to 5/spl times/X10/sup 15/ ion/cm/sup 2/ and corresponding B/sup +/ and F/sup +/ atomic-ion implantation. The depth profiles of lattice damage as well as nonuniform damage of native oxide and components of interface can be calculated from the multilayer optical model. The spectroscopic ellipsometric data and effective medium approximation (EMB) can be calculated by means of the computer program described.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128776641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of ohmic contacts for compound semiconductors 化合物半导体欧姆触点的发展
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.500170
M. Murakami, T. Oku
{"title":"Development of ohmic contacts for compound semiconductors","authors":"M. Murakami, T. Oku","doi":"10.1109/ICSICT.1995.500170","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.500170","url":null,"abstract":"Recent several breakthroughs in wide energy gap compound semiconductor materials have inspired many researchers to develop new electronic devices capable of high temperature and/or high power operation, blue light-emitting-diodes, and ultra-short wavelength laser-diodes. One of the restrictions for mass production of these devices is lack of low resistance ohmic contact materials which satisfy the device requirements. In this paper current status of development of ohmic contacts for n-GaAs, p-InP, p-GaN and p-ZnSe are briefly reviewed, and then the recent progress of the contacts to n-GaAs is described.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128838910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tailored modeling of microdevices and systems using thermodynamic methods 使用热力学方法对微设备和系统进行定制建模
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503368
G. Wachutka
{"title":"Tailored modeling of microdevices and systems using thermodynamic methods","authors":"G. Wachutka","doi":"10.1109/ICSICT.1995.503368","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503368","url":null,"abstract":"In the development and production of miniaturized electronic devices and transducers, computer simulations constitute a cost-effective and time-economizing alternative to the traditional experimental approach by \"straightforward trial and error\". Application-oriented modeling not only helps the designer in understanding the \"inner life\" of the individual components and their cooperation in a circuit or microsystem, but it also assists him in making decisions with a view to finding optimized microstructures under technological and economical constraints. The ambitious long-term goal is the automated optimization of microsystems according to customer-supplied specifications in a computer-based \"virtual factory\" prior to the real fabrication. Currently several attempts are being made to build up a \"CAD tool box\" for top-down and closed-loop simulation of microsystems. Using the concept of \"tailored modeling\", which is based on established thermodynamic methods, specific problems of microtransducer modeling such as the consistent formulation of transducer effects, the consistent treatment of coupled fields, and methodologies for fast and reliable model validation can be tackled in a practical way.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125463751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Implementation of a 6.5 MHz 34-B NCO [numerically controlled oscillator] 6.5 MHz 34-B NCO[数控振荡器]的实现
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.500067
Shi Yunhua, Sheng Shimin, L. Yue, Ji Lijiu
{"title":"Implementation of a 6.5 MHz 34-B NCO [numerically controlled oscillator]","authors":"Shi Yunhua, Sheng Shimin, L. Yue, Ji Lijiu","doi":"10.1109/ICSICT.1995.500067","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.500067","url":null,"abstract":"An numerically controlled oscillator chip, using a pipelined structure, has been developed in standard 2 /spl mu/m P-well CMOS technology. The typical maximum input clock rate is 6.5 MHz. By analysis, the speed limiting factors improved are the delay of the accumulator and the data acquiring rate of the ROM. Through the use of an improved pipelined structure and N-well CMOS technology, an NCO device with a clock rate in excess of 10 MHz is indeed possible.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126919916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Study of the thermal annealing characteristic on SI-GaAs wafers SI-GaAs晶圆的热退火特性研究
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.500176
Guangpin Li, Q. Ru, Jing Li, Xiukun He, Shenjun Nin, Xiao-Dan Guo
{"title":"Study of the thermal annealing characteristic on SI-GaAs wafers","authors":"Guangpin Li, Q. Ru, Jing Li, Xiukun He, Shenjun Nin, Xiao-Dan Guo","doi":"10.1109/ICSICT.1995.500176","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.500176","url":null,"abstract":"The technology of traditional and multi-step thermal annealing on SI-GaAs wafers after crystal growth is investigated. The effect of annealing technology on the wafer characteristics is studied by infrared absorption, chemical etching, Hall effect, photo-stimulation current and X ray double crystal diffraction. The crystal homogeneity is improved by multiple step thermal annealing. The effect on EL2 concentration and the mechanism of the thermal annealing induced homogeneity improvement are discussed.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123354133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
NPU ASIC chip tester NPU ASIC芯片测试仪
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503549
G. Ren, Ling Wang, Deyuan Gao
{"title":"NPU ASIC chip tester","authors":"G. Ren, Ling Wang, Deyuan Gao","doi":"10.1109/ICSICT.1995.503549","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503549","url":null,"abstract":"NPU ASIC chip tester is a low cost, functional tester. It can test chips in three modes: off-line, on-line, interactive. It can test chips that have up to 128 pins. Each test driver of this tester is programmable independently. Its hardware is implemented mainly using Xilinx FPGAs. It has a powerful software package, which facilitates the design of test programs and the analysis of test results. This software package also provides interfaces with many current EDA tools.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126424490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study on solid phase epitaxy of sputtered SiGe film 溅射SiGe薄膜固相外延的研究
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.500239
W. Qi, B. Li, G. Jiang, W.N. Huang, Z. Gu, C. Lan
{"title":"Study on solid phase epitaxy of sputtered SiGe film","authors":"W. Qi, B. Li, G. Jiang, W.N. Huang, Z. Gu, C. Lan","doi":"10.1109/ICSICT.1995.500239","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.500239","url":null,"abstract":"The experimental results on solid phase epitaxy of ion beam sputtered SiGe film on Si(100) substrate are presented. The SiGe/Si hetero-epitaxy is achieved by high temperature thermal processes such as diffusion, annealing, and oxidation. X-ray diffraction, Raman spectroscopy, and Rutherford backscattering spectroscopy show the epitaxial character of SiGe film on Si substrate.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"301 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121609377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Testability design for sequential circuit with multiple feedback 多反馈顺序电路的可测试性设计
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.500068
Bo Ye, Z. Zheng, Jun Hu, Wei Li
{"title":"Testability design for sequential circuit with multiple feedback","authors":"Bo Ye, Z. Zheng, Jun Hu, Wei Li","doi":"10.1109/ICSICT.1995.500068","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.500068","url":null,"abstract":"Partial scan testability design method for sequential circuits with multiple feedback is proposed in this paper. The selection of flip-flops is aimed at breaking up the cyclic structure and reducing the sequential depth of the circuit so that test generation can be simplified. Combinational test generation algorithm is used in this method and it can reach ideal fault coverage. Experimental results show that above 90% fault coverage can be obtained by scanning just 20-40% of the flip-flops.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"344 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123102973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Wafer bonding of Si with dissimilar materials 硅与不同材料的晶圆键合
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503338
Q. Tong, G. Kidao, T. Tan, U. Gosele
{"title":"Wafer bonding of Si with dissimilar materials","authors":"Q. Tong, G. Kidao, T. Tan, U. Gosele","doi":"10.1109/ICSICT.1995.503338","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503338","url":null,"abstract":"Wafer bonding provides a high degree of flexibility in material integration. However, the major concerns of Si wafer bonding with dissimilar materials are their thermal mismatch and the bubble generation during the annealing process. The former requires the annealing temperature as low as possible to achieve a sufficiently high bond energy. The latter depends on the removal of hydrocarbon contaminants from the mating surfaces prior to bonding. We have employed the described low temperature bonding approach in realizing bulk quality ultrathin SOI by an ion-implanted carbon etch stop, single crystal ultrathin Si on quartz or on glass and Si/ZnS.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126477101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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