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Proceedings of 4th International Conference on Solid-State and IC Technology最新文献

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The study of light doped chromium SI-GaAs single crystal in the LEC technology 光掺杂铬SI-GaAs单晶在LEC技术中的研究
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.500178
Jinliang Yuan, Dege Qi, Zhanping Lai, S. Niu, G. Du, Yanfeng Liu
{"title":"The study of light doped chromium SI-GaAs single crystal in the LEC technology","authors":"Jinliang Yuan, Dege Qi, Zhanping Lai, S. Niu, G. Du, Yanfeng Liu","doi":"10.1109/ICSICT.1995.500178","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.500178","url":null,"abstract":"In this paper, a special technique using light doped or super-light doped (LDC or SLDC) chromium is reported with a LEC system. It is able to obtain repeatedly SI-GaAs crystals of high resistivity and mobility, and to decrease resistivity inhomogeneities substantially. A new model of the compensation mechanism for LDC and SLDC is established.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"1992 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131504696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Process updatable layout design in GDT 在GDT中处理可更新的布局设计
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503373
Huamao Liu
{"title":"Process updatable layout design in GDT","authors":"Huamao Liu","doi":"10.1109/ICSICT.1995.503373","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503373","url":null,"abstract":"In this paper, we introduce a method of generating process independent standard cell library and implementing the chip layout with automation tools in GDT. The VLSI designer is able to emigrate their original product to a new developed fabrication process.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131003150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The dependence of residual stress and warps of Si wafers on the process technique 硅片残余应力和翘曲与工艺技术的关系
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503386
M.J. Zhang, S. Zhang, J.G. Zheng
{"title":"The dependence of residual stress and warps of Si wafers on the process technique","authors":"M.J. Zhang, S. Zhang, J.G. Zheng","doi":"10.1109/ICSICT.1995.503386","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503386","url":null,"abstract":"The paper reports that residual stress is one of the main reasons for Si warp in Si substrate processing. The experiment shows that sliced wafers have a relative large mechanical stress, and the magnitude depends on the method of cutting. The residual stress cannot be eliminated by chemical thinning. In order to maintain Si wafer flatness, one should pay attention to removing the stress in the whole Si wafer process.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133472141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Microstructures and visible photoluminescence of excimer laser crystallized a-Si:H/a-SiN/sub x/:H multi-quantum wells 准分子激光结晶a-Si:H/a-SiN/sub x/:H多量子阱的微观结构和可见光致发光
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.499778
Zhifeng Li, Xinfan Huang, Wei Wu, T. Ma, Kunji Chen, Xiao-yuan Chen, Jun-ming Liu, Zhi-guo Liu
{"title":"Microstructures and visible photoluminescence of excimer laser crystallized a-Si:H/a-SiN/sub x/:H multi-quantum wells","authors":"Zhifeng Li, Xinfan Huang, Wei Wu, T. Ma, Kunji Chen, Xiao-yuan Chen, Jun-ming Liu, Zhi-guo Liu","doi":"10.1109/ICSICT.1995.499778","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.499778","url":null,"abstract":"We report the visible photoluminescence (PL) at room temperature from KrF excimer laser annealed a-Si:H/a-SiN/sub x/:H multi-quantum wells (MQWs). X-ray diffraction (XRD) and Raman scattering spectra demonstrate the microstructures of crystallized silicon within the MQWs and the crystallinity which can be controlled by excimer laser energy density. The wavelength of PL peak is around 640 nm and does not shift significantly with excimer laser energy.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133803835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
CMOS realization of continuous-time filter 连续时间滤波器的CMOS实现
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.499648
Qingquan Han, Yanmei Gao, Y. Jia
{"title":"CMOS realization of continuous-time filter","authors":"Qingquan Han, Yanmei Gao, Y. Jia","doi":"10.1109/ICSICT.1995.499648","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.499648","url":null,"abstract":"In this paper, the modified CMOS operational transconductance amplifier (MOTA) with multiple output terminals is proposed. The design and CMOS realization of the continuous-time current-mode all-pole lowpass filter with the MOTA leapfrog structure are discussed. For this kind of fully integrated continuous-time filter, the circuit structure is simple and the design is convenient. Because of using the current as the active parameter, the circuit operates with larger signal bandwidths, better linearity, higher slew rate and larger dynamic range than voltage-mode circuits. Since the OTA and capacitor are grounded, the circuit is not sensitive to the non-integrated capacitor. The circuit preserves the low sensitivity to the element. The design example is given and simulated by using SPICE.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"668 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115751027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Designing new optical receiver frontends for high performance 设计新的高性能光接收机前端
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.499776
N. Kojima, T. Hayasaka, S. Osada, Y. Isida
{"title":"Designing new optical receiver frontends for high performance","authors":"N. Kojima, T. Hayasaka, S. Osada, Y. Isida","doi":"10.1109/ICSICT.1995.499776","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.499776","url":null,"abstract":"This paper presents new FET optical receiver frontends designed for broadband performance, high sensitivity and extended dynamic range. A PIN photodiode and GaAs FETs are used for experiments. Two frontends are presented, they show broad bandwidths of about 1.0 GHz. The frontends operate with high optical power input to the PIN photodiode.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124689942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of n-GaAs surface preparation and RF power on the electrical characteristics of W/n-GaAs Schottky diode fabricated by RF sputtering n-GaAs表面制备和射频功率对射频溅射制备W/n-GaAs肖特基二极管电学特性的影响
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.500173
A. Singh, L. Velásquez, G. Aroca
{"title":"Effect of n-GaAs surface preparation and RF power on the electrical characteristics of W/n-GaAs Schottky diode fabricated by RF sputtering","authors":"A. Singh, L. Velásquez, G. Aroca","doi":"10.1109/ICSICT.1995.500173","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.500173","url":null,"abstract":"Large area W/n-GaAs/In Schottky diodes A and B were fabricated by RF Sputter deposition of W using a rf power of 200 Watt for 45 min., on chemically etched and sputter etched polished surfaces of n-GaAs, respectively. The W/n-GaAs Schottky diode C was prepared by deposition of W on the chemically etched polished surface of n-GaAs by RF Sputtering using a rf power of 450 Watts for 20 min. The I-V, and 1 MHz C-V data for the diode A, indicated that W formed a good quality, stable rectifying contact to chemically etched n-GaAs surface, with a rectification ratio (r) of 300, ideality factor (n) of 1.39, reverse saturation current (I/sub 0/) of 1.2/spl times/10/sup -6/ A and the C-V barrier height (/spl phi//sub bo/) of 1.5 V. However, the diodes B (with r=20, I/sub 0/=2.9/spl times/10/sup -5/ A, n=1.43 and /spl phi//sub bo/=1.4 V) and C (with r=30, n=2.1, I/sub 0/= 2.6/spl times/10/sup -5/ A, and /spl phi//sub bo/=1.2 V) showed poor rectification properties. The high values for the low frequency forward capacitance in the diodes B and C, indicated that the formation of high density surface defects during the RF sputter etching of the polished surface of n-GaAs, and by the sputter deposition of W on the chemically etched surface of n-GaAs, using high rf power, caused the degradation in the quality of the W/n-GaAs Schottky contacts.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122356780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Future technology challenge for giga bit DRAM generation 千兆位DRAM的未来技术挑战
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.499652
J.G. Lee
{"title":"Future technology challenge for giga bit DRAM generation","authors":"J.G. Lee","doi":"10.1109/ICSICT.1995.499652","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.499652","url":null,"abstract":"Cost/performance DRAM developments in the industry have followed a set of remarkably consistent trends in cell area, chip area and performance for the last seven generation from 64K to 256 Mb and very likely through the eighth of 1Gb DRAM. New concepts on device and circuit design as well as technology innovations have been the key to allowing these trends to be met. The giga bit generation will very likely require a new breakpoint if the trends are to be continued. A few major areas of technology innovations have been key to the requirements, such as the lithography shrink ability (l.4/spl times/ each generation), levels of metallization and fundamental limitation of device scaling to meet performance goal (1.25/spl times/ chip level), high dielectric materials due to cell area reduction to meet cell capacitance, etc. The system designers will require higher performance. We must decide whether we tackle performance by a technological or by an architectural solution or both. This paper presents the highlights of the technology and concepts for future DRAMs with a focus on its key technology issues.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130559874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of temperature distribution in recrystallized SOI film with reflective-stripe structure by laser irradiation 激光辐照具有反射条纹结构的重结晶SOI薄膜温度分布的模拟
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503343
Hongwei Wang, Ji-sheng Zhang, Changqing Zhan, P. Tsien
{"title":"Simulation of temperature distribution in recrystallized SOI film with reflective-stripe structure by laser irradiation","authors":"Hongwei Wang, Ji-sheng Zhang, Changqing Zhan, P. Tsien","doi":"10.1109/ICSICT.1995.503343","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503343","url":null,"abstract":"A two-dimensional thermal analysis on laser induced recrystallization of SOI film with a reflective-stripe structure was made, indicating that the temperature distribution is related to laser power, scanning rate, high-reflective-region width, reflectivities of high- and low-reflective-regions and the alignment of the laser beam with the high-reflective-region.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"10 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132872073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A multi-input fuzzy processor for pattern recognition 用于模式识别的多输入模糊处理器
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.499646
Liusheng Liu, Zhijian Li, B. Shi
{"title":"A multi-input fuzzy processor for pattern recognition","authors":"Liusheng Liu, Zhijian Li, B. Shi","doi":"10.1109/ICSICT.1995.499646","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.499646","url":null,"abstract":"A multi-input fuzzy processor for pattern recognition is proposed. It accepts multiple inputs that represent multiple features of an unknown pattern in time-shared way. Membership function generators generate memberships corresponding to each standard pattern according to the input features. Switched-capacitor accumulators sum multiple memberships to get synthetic memberships. Finally, WTA (Winner-Take-All) circuit finds the maximum synthetic membership and the recognition result is obtained.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130942896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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