光掺杂铬SI-GaAs单晶在LEC技术中的研究

Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI:10.1109/ICSICT.1995.500178

Jinliang Yuan, Dege Qi, Zhanping Lai, S. Niu, G. Du, Yanfeng Liu

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引用次数: 0

摘要

本文报道了一种在LEC体系中使用光掺杂或超光掺杂(LDC或SLDC)铬的特殊技术。它能够获得高电阻率和高迁移率的SI-GaAs晶体，并大大降低电阻率不均匀性。建立了一种新的最不发达国家和最不发达国家补偿机制模型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The study of light doped chromium SI-GaAs single crystal in the LEC technology

In this paper, a special technique using light doped or super-light doped (LDC or SLDC) chromium is reported with a LEC system. It is able to obtain repeatedly SI-GaAs crystals of high resistivity and mobility, and to decrease resistivity inhomogeneities substantially. A new model of the compensation mechanism for LDC and SLDC is established.

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Proceedings of 4th International Conference on Solid-State and IC Technology

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