Microstructures and visible photoluminescence of excimer laser crystallized a-Si:H/a-SiN/sub x/:H multi-quantum wells

Zhifeng Li, Xinfan Huang, Wei Wu, T. Ma, Kunji Chen, Xiao-yuan Chen, Jun-ming Liu, Zhi-guo Liu
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引用次数: 0

Abstract

We report the visible photoluminescence (PL) at room temperature from KrF excimer laser annealed a-Si:H/a-SiN/sub x/:H multi-quantum wells (MQWs). X-ray diffraction (XRD) and Raman scattering spectra demonstrate the microstructures of crystallized silicon within the MQWs and the crystallinity which can be controlled by excimer laser energy density. The wavelength of PL peak is around 640 nm and does not shift significantly with excimer laser energy.
准分子激光结晶a-Si:H/a-SiN/sub x/:H多量子阱的微观结构和可见光致发光
本文报道了KrF准分子激光退火a-Si:H/a-SiN/sub x/:H多量子阱(mqw)在室温下的可见光致发光(PL)。x射线衍射(XRD)和拉曼散射(Raman)光谱显示了MQWs内结晶硅的微观结构以及准分子激光能量密度可控制的结晶度。PL峰的波长在640 nm左右,随准分子激光能量的变化不明显。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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