The dependence of residual stress and warps of Si wafers on the process technique

Abstract

The paper reports that residual stress is one of the main reasons for Si warp in Si substrate processing. The experiment shows that sliced wafers have a relative large mechanical stress, and the magnitude depends on the method of cutting. The residual stress cannot be eliminated by chemical thinning. In order to maintain Si wafer flatness, one should pay attention to removing the stress in the whole Si wafer process.