The study of light doped chromium SI-GaAs single crystal in the LEC technology

Abstract

In this paper, a special technique using light doped or super-light doped (LDC or SLDC) chromium is reported with a LEC system. It is able to obtain repeatedly SI-GaAs crystals of high resistivity and mobility, and to decrease resistivity inhomogeneities substantially. A new model of the compensation mechanism for LDC and SLDC is established.