Hongwei Wang, Ji-sheng Zhang, Changqing Zhan, P. Tsien
{"title":"激光辐照具有反射条纹结构的重结晶SOI薄膜温度分布的模拟","authors":"Hongwei Wang, Ji-sheng Zhang, Changqing Zhan, P. Tsien","doi":"10.1109/ICSICT.1995.503343","DOIUrl":null,"url":null,"abstract":"A two-dimensional thermal analysis on laser induced recrystallization of SOI film with a reflective-stripe structure was made, indicating that the temperature distribution is related to laser power, scanning rate, high-reflective-region width, reflectivities of high- and low-reflective-regions and the alignment of the laser beam with the high-reflective-region.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"10 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simulation of temperature distribution in recrystallized SOI film with reflective-stripe structure by laser irradiation\",\"authors\":\"Hongwei Wang, Ji-sheng Zhang, Changqing Zhan, P. Tsien\",\"doi\":\"10.1109/ICSICT.1995.503343\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A two-dimensional thermal analysis on laser induced recrystallization of SOI film with a reflective-stripe structure was made, indicating that the temperature distribution is related to laser power, scanning rate, high-reflective-region width, reflectivities of high- and low-reflective-regions and the alignment of the laser beam with the high-reflective-region.\",\"PeriodicalId\":286176,\"journal\":{\"name\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"volume\":\"10 3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1995.503343\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.503343","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulation of temperature distribution in recrystallized SOI film with reflective-stripe structure by laser irradiation
A two-dimensional thermal analysis on laser induced recrystallization of SOI film with a reflective-stripe structure was made, indicating that the temperature distribution is related to laser power, scanning rate, high-reflective-region width, reflectivities of high- and low-reflective-regions and the alignment of the laser beam with the high-reflective-region.