{"title":"利用椭圆偏振光谱多层分析BF/sub //sup +/植入硅的分子效应","authors":"Wenyu Zhu, Xiaoqing Li, Chenglu Lin","doi":"10.1109/ICSICT.1995.503551","DOIUrl":null,"url":null,"abstract":"The damage layer of ion implantation has been supposed to consist of 50 differential zones to investigate the molecular effect of BF/sub 2//sup +/ implanted silicon. The ellipsometric spectra (photon energy: 1.6-5.0 eV) were measured for samples implanted with 147 keV BF/sub 2//sup +/ molecular ions at the dose range from 3/spl times/x10/sup 13/ to 5/spl times/X10/sup 15/ ion/cm/sup 2/ and corresponding B/sup +/ and F/sup +/ atomic-ion implantation. The depth profiles of lattice damage as well as nonuniform damage of native oxide and components of interface can be calculated from the multilayer optical model. The spectroscopic ellipsometric data and effective medium approximation (EMB) can be calculated by means of the computer program described.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The multilayer analysis of molecular effect in BF/sub 2//sup +/ implanted silicon using ellipsometric spectra\",\"authors\":\"Wenyu Zhu, Xiaoqing Li, Chenglu Lin\",\"doi\":\"10.1109/ICSICT.1995.503551\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The damage layer of ion implantation has been supposed to consist of 50 differential zones to investigate the molecular effect of BF/sub 2//sup +/ implanted silicon. The ellipsometric spectra (photon energy: 1.6-5.0 eV) were measured for samples implanted with 147 keV BF/sub 2//sup +/ molecular ions at the dose range from 3/spl times/x10/sup 13/ to 5/spl times/X10/sup 15/ ion/cm/sup 2/ and corresponding B/sup +/ and F/sup +/ atomic-ion implantation. The depth profiles of lattice damage as well as nonuniform damage of native oxide and components of interface can be calculated from the multilayer optical model. The spectroscopic ellipsometric data and effective medium approximation (EMB) can be calculated by means of the computer program described.\",\"PeriodicalId\":286176,\"journal\":{\"name\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1995.503551\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.503551","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The multilayer analysis of molecular effect in BF/sub 2//sup +/ implanted silicon using ellipsometric spectra
The damage layer of ion implantation has been supposed to consist of 50 differential zones to investigate the molecular effect of BF/sub 2//sup +/ implanted silicon. The ellipsometric spectra (photon energy: 1.6-5.0 eV) were measured for samples implanted with 147 keV BF/sub 2//sup +/ molecular ions at the dose range from 3/spl times/x10/sup 13/ to 5/spl times/X10/sup 15/ ion/cm/sup 2/ and corresponding B/sup +/ and F/sup +/ atomic-ion implantation. The depth profiles of lattice damage as well as nonuniform damage of native oxide and components of interface can be calculated from the multilayer optical model. The spectroscopic ellipsometric data and effective medium approximation (EMB) can be calculated by means of the computer program described.
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