Study of the thermal annealing characteristic on SI-GaAs wafers

Abstract

The technology of traditional and multi-step thermal annealing on SI-GaAs wafers after crystal growth is investigated. The effect of annealing technology on the wafer characteristics is studied by infrared absorption, chemical etching, Hall effect, photo-stimulation current and X ray double crystal diffraction. The crystal homogeneity is improved by multiple step thermal annealing. The effect on EL2 concentration and the mechanism of the thermal annealing induced homogeneity improvement are discussed.