溅射SiGe薄膜固相外延的研究

Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI:10.1109/ICSICT.1995.500239

W. Qi, B. Li, G. Jiang, W.N. Huang, Z. Gu, C. Lan

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引用次数: 0

摘要

介绍了离子束溅射SiGe薄膜在Si(100)衬底上固相外延的实验结果。SiGe/Si异质外延是通过扩散、退火和氧化等高温热过程实现的。x射线衍射、拉曼光谱和卢瑟福后向散射光谱显示了Si衬底上SiGe薄膜的外延特性。

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Study on solid phase epitaxy of sputtered SiGe film

The experimental results on solid phase epitaxy of ion beam sputtered SiGe film on Si(100) substrate are presented. The SiGe/Si hetero-epitaxy is achieved by high temperature thermal processes such as diffusion, annealing, and oxidation. X-ray diffraction, Raman spectroscopy, and Rutherford backscattering spectroscopy show the epitaxial character of SiGe film on Si substrate.

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Proceedings of 4th International Conference on Solid-State and IC Technology

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