The multilayer analysis of molecular effect in BF/sub 2//sup +/ implanted silicon using ellipsometric spectra

Abstract

The damage layer of ion implantation has been supposed to consist of 50 differential zones to investigate the molecular effect of BF/sub 2//sup +/ implanted silicon. The ellipsometric spectra (photon energy: 1.6-5.0 eV) were measured for samples implanted with 147 keV BF/sub 2//sup +/ molecular ions at the dose range from 3/spl times/x10/sup 13/ to 5/spl times/X10/sup 15/ ion/cm/sup 2/ and corresponding B/sup +/ and F/sup +/ atomic-ion implantation. The depth profiles of lattice damage as well as nonuniform damage of native oxide and components of interface can be calculated from the multilayer optical model. The spectroscopic ellipsometric data and effective medium approximation (EMB) can be calculated by means of the computer program described.